ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N/P-CH 30V 3.4A TSOT23-6
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel Complementary
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：3.4A (Ta), 2.7A (Ta)
- Rds On (Max) @ Id, Vgs：60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V
- Vgs(th) (Max) @ Id：1.8V @ 250µA, 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：6.6nC @ 10V, 6.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：278pF @ 15V, 287pF @ 15V
- Power - Max：880mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package：TSOT-23-6
- Grade：-
- Qualification：-
Download product information
Overview
The DMC3061SVT-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a TSOT surface-mount package with six pins. The device supports a maximum drain-source voltage of 30 V and a continuous drain current of 3.4 A. Key electrical parameters include a maximum on-resistance of 200 mΩ, a typical gate charge of 3.5 nC at the specified gate-source voltage, and a power dissipation rating of 1.08 W. The component operates within a temperature range from -55°C to +150°C.
Feature Summary
- Dual configuration integrating two independent N-channel transistors in a single compact package.
- Enhancement mode operation suitable for low-side switching applications.
- TSOT surface-mount packaging designed for automated assembly processes.
Applications
- Low-side switching circuits
- Load management systems
- General-purpose transistor arrays
Procurement Notes
Verify the specific ordering suffix against official manufacturer documentation to confirm exact package dimensions and tape-and-reel specifications. Ensure that the requested part number matches the precise pinout and marking requirements for your design. Cross-reference the datasheet revision date to confirm parameter validity before finalizing procurement orders.
Selection Notes
Select this component when a dual N-channel configuration is required in a small form factor. Evaluate the 200 mΩ on-resistance against thermal constraints to ensure adequate heat dissipation within the 1.08 W power limit. Confirm that the 30 V breakdown voltage exceeds the maximum circuit voltage under all operating conditions.
Part Context
This component belongs to the DMN3061 series of dual MOSFETs produced by Diodes Incorporated. The series utilizes silicon technology for standard switching performance. The TSOT package provides a compact solution for space-constrained printed circuit board layouts compared to larger through-hole alternatives.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Verify compatibility with alternative dual N-channel MOSFETs by matching the 30 V voltage rating, 3.4 A current capacity, and TSOT-6 package footprint.
