DMC31D5UDJ-7

Overview

The DMC31D5UDJ-7 is a complementary pair enhancement mode MOSFET from Diodes Incorporated, integrating an N-channel and a P-channel device within a single SOT963 package. The N-channel transistor provides a maximum drain-source voltage of 30V with a continuous drain current of 220mA at 25°C. Its on-resistance reaches a maximum of 1.5Ω at VGS = 4.5V. The P-channel counterpart features a -30V breakdown voltage and a continuous drain current of -200mA, with an on-resistance up to 5Ω at VGS = -4.5V. Both channels operate across a temperature range of -55°C to +150°C.

Feature Summary

• Complementary N/P-channel configuration in an ultra-small surface mount package
• Low on-state resistance optimized for high efficiency power management applications
• Very low gate threshold voltage enabling effective operation at reduced drive levels
• ESD protected gate structure ensuring robustness against electrostatic discharge events

Applications

• General purpose interfacing switch
• Power management functions
• Analog switching circuits

Procurement Notes

Verify the specific ordering suffix when sourcing components. The suffix indicates the taping orientation used during packaging. Confirm that the received parts match the required orientation for automated assembly processes. Ensure compliance with RoHS directives and verify lead-free status through official manufacturer documentation before finalizing procurement orders.

Selection Notes

Evaluate the total power dissipation capability relative to the available thermal resistance in the target application environment. Consider the gate threshold voltage limits to ensure reliable switching under varying supply conditions. Assess the dynamic characteristics, including input capacitance and gate charge, to determine suitability for high-frequency switching operations where rapid transitions are required.

Part Context

This component belongs to the DMC31D5U series of complementary MOSFETs manufactured by Diodes Incorporated. It utilizes the SOT963 case outline, which measures approximately 1mm by 1mm. The series is designed to minimize on-state resistance while maintaining superior switching performance for compact electronic designs.

Replacement Considerations

The DMC31D5UDJ-7B serves as a direct alternative part number within the same product family. It shares identical electrical specifications and physical dimensions but utilizes a different taping orientation for reel packaging. Verify the specific orientation requirements of the manufacturing equipment before substituting this variant.

FAQ

What is the maximum continuous drain current for the N-channel transistor?

The maximum continuous drain current for the N-channel transistor is 220mA at an ambient temperature of +25°C.

Does the device meet automotive reliability standards?

Yes, the DMC31D5UDJ is qualified to AEC-Q101 standards for high reliability applications.

What is the maximum gate-source voltage rating?

The maximum gate-source voltage rating for both the N-channel and P-channel transistors is ±12V.