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Product Detailed Parameters
- Description：MOSFET N/P-CH 30V 1.1A TSOT26
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel Complementary
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：1.1A (Ta), 700mA (Ta)
- Rds On (Max) @ Id, Vgs：460mOhm @ 200mA, 4.5V, 1Ohm @ 400mA, 4.5V
- Vgs(th) (Max) @ Id：950mV @ 250µA, 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.9nC @ 4.5V, 1.6nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds：40.8pF @ 25V, 54pF @ 15V
- Power - Max：540mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package：TSOT-26
- Grade：-
- Qualification：-
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Overview
The DMC3732UVT-13 is a complementary pair enhancement mode MOSFET manufactured by Diodes Incorporated. It integrates an N-channel device (Q1) and a P-channel device (Q2) within a single TSOT26 package. The N-channel transistor provides a drain-source voltage of 30V, with an on-resistance of 460mΩ at VGS=4.5V and a continuous current of 1.1A. The P-channel counterpart offers -30V breakdown, 1000mΩ resistance at VGS=-4.5V, and -0.7A continuous current. Both devices operate across a temperature range of -55°C to +150°C.
Feature Summary
- Integrates N-channel and P-channel enhancement mode transistors in a compact TSOT26 package
- Optimized for low on-state resistance while maintaining fast switching performance
- Designed for high-efficiency power management applications
Applications
- Backlighting circuits
- DC-DC converters
- Power-management functions
Procurement Notes
Verify the specific ordering suffix matches the required tape and reel quantity. Confirm that the component meets RoHS compliance standards and lead-free requirements as specified in the manufacturer's documentation. Ensure the package type aligns with the intended PCB layout constraints before finalizing procurement orders.
Selection Notes
Select this component when space-constrained designs require both N-channel and P-channel switching capabilities. Evaluate the thermal resistance characteristics against the expected load conditions. Verify that the gate threshold voltages are compatible with the available control logic levels for the specific application environment.
Part Context
This part belongs to the DMC3732UVT series of complementary MOSFETs from Diodes Incorporated. It serves as a dual-transistor solution designed to minimize board space compared to discrete components. The product line focuses on providing efficient switching solutions for portable and power management electronics.
Replacement Considerations
An automotive-compliant version is available under the separate datasheet designation DMC3732UVTQ. Verify pinout compatibility and electrical specifications before substituting with other complementary MOSFET pairs.
