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Product Detailed Parameters
- Description：MOSFET N/P-CH 30V 1.1A TSOT26
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel Complementary
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：1.1A (Ta), 700mA (Ta)
- Rds On (Max) @ Id, Vgs：460mOhm @ 200mA, 4.5V, 1Ohm @ 400mA, 4.5V
- Vgs(th) (Max) @ Id：950mV @ 250µA, 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.9nC @ 4.5V, 1.6nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds：40.8pF @ 25V, 54pF @ 15V
- Power - Max：540mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package：TSOT-26
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The DMC3732UVTQ-13 is a complementary pair enhancement mode MOSFET manufactured by Diodes Incorporated. It integrates an N-channel device (Q1) and a P-channel device (Q2) within a single TSOT26 package. The Q1 channel provides a drain-source voltage of 30V with a maximum continuous drain current of 1.1A at +25°C, while the Q2 channel offers -30V breakdown and -0.7A current capability. Both channels are optimized for low on-state resistance and fast switching speeds, making them suitable for high-efficiency power management applications.
Feature Summary
- Complementary N-channel and P-channel enhancement mode MOSFETs integrated in a compact TSOT26 package
- Optimized for low on-state resistance to minimize conduction loss while maintaining superior switching performance
- Qualified for automotive applications under AEC-Q101 standards with PPAP capability
- Manufactured using lead-free, halogen-free, and antimony-free green materials
Applications
- Backlighting circuits
- DC-DC converters
- Power-management functions
Procurement Notes
Verify the specific ordering suffix when purchasing. The -13 suffix indicates a tape and reel packaging quantity of 10,000 units. Confirm that the required component matches this exact packing configuration before placing orders to ensure compatibility with automated assembly equipment.
Selection Notes
Select this component for designs requiring a matched complementary MOSFET pair in a minimal footprint. Ensure the application operates within the specified thermal limits, as the TSOT26 package has a junction-to-ambient thermal resistance of 230 °C/W on a minimum recommended pad layout. Verify gate drive voltages align with the threshold characteristics for optimal RDS(ON) performance.
Part Context
This part belongs to the DMC3732 series of complementary MOSFETs from Diodes Incorporated. It is designed to replace discrete N-channel and P-channel solutions, saving board space and simplifying assembly. The device is specifically engineered for portable and consumer electronics where efficiency and size are critical constraints.
Replacement Considerations
Direct replacements must match the TSOT26 package, 30V/30V voltage ratings, and complementary configuration. Verify that alternative components meet the same AEC-Q101 qualification if automotive reliability is required. Check pinout compatibility to ensure correct source, drain, and gate connections.
FAQ
What is the maximum gate-source voltage allowed for the DMC3732UVTQ?
The maximum continuous gate-source voltage (VGSS) for both the N-channel and P-channel devices is ±8V.
Is the DMC3732UVTQ suitable for high-temperature automotive environments?
Yes, the device is AEC-Q101 qualified and manufactured in IATF 16949 certified facilities, making it suitable for automotive applications requiring specific change control.
How does the on-resistance vary with temperature?
The on-resistance increases as the junction temperature rises. For example, the N-channel RDS(ON) is specified at +25°C but will increase at higher temperatures like +125°C or +150°C, as shown in the typical curves.
