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The DMC4015SSD-13 is a complementary pair enhancement mode MOSFET in an SO-8 package. It integrates one N-channel and one P-channel device. The N-channel Q1 has a drain-source voltage of 40V, on-resistance of 15mΩ at VGS=10V, and continuous current of 8.6A. The P-channel Q2 has a voltage of -40V, resistance of 29mΩ at VGS=-10V, and current of -6.2A. Total power dissipation is 1.2W at 25°C. Operating temperature ranges from -55°C to +150°C.
Verify the component against Diodes Incorporated datasheet DS37348 Rev. 4-2. Confirm the SO-8 package and tape & reel packaging details. Ensure compliance with RoHS and lead-free requirements as specified by the manufacturer. Check for any specific handling instructions related to moisture sensitivity level 1.
Select this component for applications requiring a matched N-P channel pair in a compact SO-8 footprint. Consider the 40V rating and low on-resistance values for efficient power switching. Evaluate thermal performance based on the 1.2W power dissipation limit at 25°C ambient temperature.
The DMC4015SSD-13 belongs to the DMC40xx series of complementary MOSFETs from Diodes Incorporated. This series is designed for high-efficiency power management applications. The part number suffix -13 indicates the standard tape and reel packaging configuration.
No public confirmed substitute part numbers are available in the provided documentation.
The maximum continuous drain current for Q1 is 8.6A at TA = +25°C.
The gate threshold voltage (VGS(th)) ranges from 1V to 3V for both the N-channel and P-channel devices.
Yes, the operating and storage temperature range extends up to +150°C.