DMC4028SSD-13

$1.14

Description：MOSFET N/P-CH 40V 6.5A/4.8A 8SO
Series：-

SKU:3ff667b16c5e Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 40V 6.5A/4.8A 8SO
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：40V
Current - Continuous Drain (Id) @ 25°C：6.5A, 4.8A
Rds On (Max) @ Id, Vgs：28mOhm @ 6A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：12.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：604pF @ 20V
Power - Max：1.8W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SO
Grade：-
Qualification：-

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DMC4028SSD-13

Overview

The DMC4028SSD-13 is a complementary dual enhancement mode MOSFET manufactured by Diodes Incorporated. It integrates an N-channel device (Q1) and a P-channel device (Q2) in a single SO-8 package. The N-channel transistor provides a drain-source breakdown voltage of 40V, a continuous drain current of 7.2A at 25°C, and a maximum on-resistance of 28mΩ at VGS=10V. The P-channel transistor offers a -40V breakdown voltage, a -5.2A continuous drain current, and a maximum on-resistance of 50mΩ at VGS=-10V. Both channels operate within a junction temperature range of -55°C to +150°C.

Feature Summary

Complementary dual configuration integrating N-channel and P-channel enhancement mode MOSFETs in a single surface-mount package.
Designed for high efficiency power management applications with minimized on-state resistance and superior switching performance.
Qualified to AEC-Q101 standards for automotive reliability requirements.

Applications

Motor Control
Backlighting
DC-DC Converters
Power Management Functions

Procurement Notes

Verify the specific ordering suffix when sourcing components. The standard part number DMC4028SSD-13 denotes compliance with standard specifications, while the suffix Q indicates automotive qualification under AEC-Q101 standards. Confirm that the required package type matches the SO-8 form factor and ensure the tape and reel packaging quantity aligns with production needs. Cross-reference datasheet revisions to confirm electrical parameter consistency.

Selection Notes

Select this component for designs requiring matched N-channel and P-channel switching capabilities within a compact footprint. Evaluate thermal dissipation requirements against the specified power dissipation limits and thermal resistance values. Ensure gate drive voltages remain within the ±20V absolute maximum ratings. Consider the total gate charge and switching times for high-frequency operation constraints.

Part Context

This component belongs to the DMC4028 series of complementary dual MOSFETs produced by Diodes Incorporated. The series is engineered to provide low on-resistance and fast switching speeds suitable for various power management tasks. The product line includes variations such as the DMC4028SSDQ-13 for automotive applications, maintaining the same core electrical characteristics but adhering to stricter reliability standards.

Replacement Considerations

DMC4028SSDQ-13

FAQ

What is the maximum continuous drain current for the N-channel device?

The maximum continuous drain current for the N-channel device (Q1) is 7.2A at a case temperature of +25°C.

Does the DMC4028SSD-13 meet automotive reliability standards?

The standard DMC4028SSD-13 is not explicitly designated for automotive use; however, the DMC4028SSDQ-13 variant is qualified to AEC-Q101 standards for high reliability.