ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N/P-CH 40V 7A/5.1A 8SO
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：7A, 5.1A
- Rds On (Max) @ Id, Vgs：24mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id：2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：19.1nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1060pF @ 20V
- Power - Max：1.3W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SO
- Grade：-
- Qualification：-
Download product information
Overview
The DMC4047LSD-13 is a complementary pair enhancement mode MOSFET in an SO-8 package. The N-channel device (Q2) features a 40V drain-source voltage, 6.9A continuous current at +25°C, and a maximum on-resistance of 24mΩ at VGS=10V. The P-channel device (Q1) offers -40V breakdown, -5.1A continuous current, and a maximum on-resistance of 45mΩ at VGS=-10V. Both channels operate within a -55°C to +150°C junction temperature range with a total power dissipation of 1.3W.
Feature Summary
- Complementary N-channel and P-channel configuration for efficient power management
- Optimized low on-state resistance combined with fast switching performance
- Qualified to AEC-Q101 standards for high reliability applications
Applications
- DC-DC Converters
- Power Management Functions
- Backlighting
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 2,500-unit tape and reel packaging format. Confirm that the component meets RoHS directives and contains no intentionally added lead or halogen compounds. Ensure the SO-8 package dimensions align with the target PCB footprint requirements before finalizing procurement orders.
Selection Notes
Select this component when a matched complementary pair is required for synchronous rectification or bridge driver circuits. Evaluate the thermal resistance characteristics against the expected ambient temperature conditions. Verify that the gate threshold voltage levels are compatible with the available control logic signals for reliable switching operation.
Part Context
This part belongs to Diodes Incorporated's complementary MOSFET series designed for high-efficiency power conversion. It integrates both N-channel and P-channel transistors into a single compact SO-8 package to reduce board space and simplify circuit design for various power management topologies.
Replacement Considerations
Verify pinout compatibility and electrical parameters if substituting with other complementary pairs from different manufacturers. Ensure the replacement device maintains equivalent thermal resistance and voltage ratings for the specific application environment.
