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Product Detailed Parameters
- Description：MOSFET N/P-CH 40V 5.3A 8SO
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：5.3A
- Rds On (Max) @ Id, Vgs：45mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id：1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：37.56nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1790.8pF @ 20V
- Power - Max：1.8W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SO
- Grade：-
- Qualification：-
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Overview
The DMC4050SSD-13 is a complementary pair enhancement mode MOSFET manufactured by Diodes Incorporated. It integrates one N-channel and one P-channel device in an SO-8 surface-mount package. The N-channel Q1 supports a drain-source voltage of 40V with a maximum continuous drain current of 5.8A at 25°C, while the P-channel Q2 supports -40V and -5.8A. Both channels feature a maximum on-resistance of 45mΩ at VGS=10V and ID=3A. The device operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Matched N and P channel RDS(ON) characteristics designed to minimize power losses in bridge circuits.
- Fast switching performance optimized to reduce switching losses during operation.
- Dual device configuration reduces printed circuit board area requirements.
Applications
- 3-phase brushless DC motor (BLDC) circuits
- CCFL backlighting systems
Procurement Notes
Verify component authenticity through authorized distribution channels. Confirm that the specific order matches the required datasheet revision DS33310 Rev. 4-2. Ensure compliance with RoHS directives and confirm suitability for intended operating temperatures before integration into final assemblies.
Selection Notes
Select this component when matched N/P channel resistance is critical for minimizing conduction losses in dual-arm topologies. Evaluate thermal derating curves against expected ambient conditions. Verify gate drive voltage levels align with threshold specifications for optimal on-state performance.
Part Context
This part belongs to the DMC4050 series of complementary MOSFETs from Diodes Incorporated. It serves as a standard discrete solution for applications requiring paired N and P channel devices in a compact footprint without automotive qualification suffixes.
Replacement Considerations
For automotive applications requiring AEC-Q101 qualification and PPAP capability, consider the DMC4055SSDQ. Verify pinout compatibility and electrical parameter matching before substituting other generic complementary pairs.
FAQ
What is the maximum continuous drain current for the N-channel device?
The maximum continuous drain current for the N-channel Q1 is 5.8A at TA = +25°C.
Is the DMC4050SSD-13 qualified for automotive use?
No, this specific part number is not automotive qualified. Automotive-compliant versions are available under separate datasheets with Q-suffixes.
How does the device handle thermal dissipation?
The device has a power dissipation rating of 1.25W to 2.14W depending on PCB copper coverage and measurement conditions, with a thermal resistance (junction-to-ambient) ranging from 58°C/W to 100°C/W.
