DMC6040SSD-13

DMC6040SSD-13

$0.88
  • Description:MOSFET N/P-CH 60V 5.1A/3.1A 8SO
  • Series:-

SKU:a4300a9fc469 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET N/P-CH 60V 5.1A/3.1A 8SO
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:N and P-Channel
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):60V
  • Current - Continuous Drain (Id) @ 25°C:5.1A, 3.1A
  • Rds On (Max) @ Id, Vgs:40mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:20.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:1130pF @ 15V, 1030pF @ 30V
  • Power - Max:1.24W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SO
  • Grade:-
  • Qualification:-

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DMC6040SSD-13

Overview

The DMC6040SSD-13 is a complementary pair enhancement mode MOSFET manufactured by Diodes Incorporated. It integrates an N-channel and a P-channel device within a single SO-8 surface-mount package. The N-channel transistor provides a drain-source voltage of 60V, with a maximum on-resistance of 40mΩ at VGS=10V and a continuous drain current of 5.1A at 25°C. The P-channel counterpart offers -60V breakdown, 110mΩ on-resistance at VGS=-10V, and a continuous drain current of -3.1A at 25°C. Total power dissipation reaches 1.24W at 25°C ambient temperature.

Feature Summary

  • Complementary N/P-channel configuration in a compact SO-8 package
  • Optimized for low on-state resistance to enhance efficiency
  • Designed for superior switching performance characteristics
  • Qualified to JEDEC standards for high reliability applications

Applications

  • DC-DC converters
  • Power-management functions
  • Backlighting circuits

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the Tape & Reel packaging format containing 2,500 units per carrier. Confirm that the component meets RoHS 2 and RoHS 3 directives, ensuring it is lead-free, halogen-free, and antimony-free as defined by the manufacturer's green product standards. Cross-reference the datasheet revision DS36829 Rev. 2 - 2 to ensure alignment with current electrical specifications.

Selection Notes

Select this component when a matched N/P-channel pair is required for synchronous rectification or bridge driver stages. Ensure the application operates within the 60V drain-source voltage limits and respects the thermal constraints of the SO-8 package. Verify that gate drive voltages align with the specified thresholds for optimal RDS(ON) performance at either 10V or 4.5V logic levels.

Part Context

This part belongs to the DMC6040 series of complementary MOSFETs from Diodes Incorporated. It serves as a discrete solution for replacing dual discrete transistors, reducing board space and parasitic inductance. The standard commercial version is distinguished from automotive-grade variants like the DMC6040SSDQ-13, which carries AEC-Q101 qualification.

Replacement Considerations

The automotive-compliant alternative is the DMC6040SSDQ-13. Verify pinout compatibility and thermal resistance values before substitution. Ensure the replacement meets specific environmental or reliability requirements if the original design targeted automotive standards.

FAQ

What is the maximum continuous drain current for the N-channel device?

The maximum continuous drain current (ID) for the N-channel Q1 is 5.1A at an ambient temperature of +25°C.

Does the DMC6040SSD-13 have AEC-Q101 automotive qualification?

No, the standard DMC6040SSD-13 is not AEC-Q101 qualified. An automotive-compliant version, DMC6040SSDQ-13, is available under a separate datasheet.

What is the typical input capacitance for the N-channel MOSFET?

The typical input capacitance (Ciss) for the N-channel device is 1130 pF, measured at VDS = 15V and f = 1.0MHz.

DMC6040SSD-13DMC6040SSD-13
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