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Product Detailed Parameters
- Description：MOSFET N/P-CH 60V 3.1A PWRDI3333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：3.1A, 2.4A
- Rds On (Max) @ Id, Vgs：85mOhm @ 1.5A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：11.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：731pF @ 20V
- Power - Max：1.4W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerVDFN
- Supplier Device Package：PowerDI3333-8 (Type UXB)
- Grade：-
- Qualification：-
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Overview
The DMC6070LND-13 is a complementary pair enhancement mode MOSFET manufactured by Diodes Incorporated, housed in a POWERDI3333-8 package. It integrates one N-channel and one P-channel device. The N-channel transistor supports a drain-source voltage of 60V with a maximum on-resistance of 85mΩ at VGS=10V and a continuous drain current of 3.1A. The P-channel counterpart features a -60V breakdown voltage, a maximum on-resistance of 150mΩ at VGS=-10V, and a continuous drain current of -2.4A. Total power dissipation is rated at 1.4W, with an operating temperature range from -55°C to +150°C.
Feature Summary
- Complementary N-channel and P-channel configuration for efficient power management
- Low on-state resistance to minimize conduction losses
- Fast switching speed combined with low input capacitance
- Totally lead-free and fully RoHS compliant construction
Applications
- Power Management Functions
- Analog Switch
Procurement Notes
Verify the ordering suffix '-13' against official documentation to confirm the specific tape and reel packaging quantity of 3,000 units. Ensure that the component's absolute maximum ratings and thermal characteristics align with the target application's operational requirements before finalizing procurement decisions.
Selection Notes
Select this component when a compact dual-transistor solution is required for low-voltage power circuits. The POWERDI3333-8 package provides a small footprint suitable for space-constrained designs. Evaluate the trade-off between the N-channel's lower on-resistance and the P-channel's higher resistance based on the specific load requirements of the circuit design.
Part Context
This part belongs to the DMC6070 series of complementary MOSFETs from Diodes Incorporated. It shares the same core electrical specifications as the DMC6070LND-7 variant, differing primarily in the packaging quantity per reel. Both variants utilize the same POWERDI3333-8 case outline and are designed for high-efficiency power management applications.
Replacement Considerations
The DMC6070LND-7 is a confirmed equivalent part number within the same product family, offering identical electrical performance and mechanical dimensions. Verify that the alternative supplier or variant meets the same RoHS compliance and halogen-free standards specified in the original datasheet.
