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Product Detailed Parameters
- Description：MOSFET N/P-CH 60V 3.1A PWRDI3333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：3.1A, 2.4A
- Rds On (Max) @ Id, Vgs：85mOhm @ 1.5A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：11.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：731pF @ 20V
- Power - Max：1.4W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerVDFN
- Supplier Device Package：PowerDI3333-8 (Type UXB)
- Grade：-
- Qualification：-
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Overview
The DMC6070LND-7 is a complementary pair enhancement mode MOSFET manufactured by Diodes Incorporated. It integrates one N-channel and one P-channel device within a single POWERDI3333-8 package. The N-channel transistor provides a maximum drain-source voltage of 60V, with an on-resistance of 85mΩ at VGS=10V and a continuous drain current of 3.1A. The P-channel counterpart supports -60V breakdown, featuring an on-resistance of 150mΩ at VGS=-10V and a continuous drain current of -2.4A. Total power dissipation is rated at 1.4W, operating across a temperature range from -55°C to +150°C.
Feature Summary
- Complementary N/P-channel configuration for efficient circuit integration
- Low on-state resistance to minimize conduction losses
- Fast switching speed suitable for high-frequency applications
- Totally lead-free and fully RoHS compliant construction
Applications
- Power management functions
- Analog switch circuits
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging details. The standard tape and reel quantity for this part number is 2,000 units. Confirm that the component meets required environmental standards such as RoHS compliance before finalizing procurement specifications.
Selection Notes
Select this component when a matched N/P-channel pair is required in a compact footprint. Ensure the gate drive voltage aligns with the specified thresholds for optimal on-resistance performance. Verify thermal constraints against the 91°C/W junction-to-ambient resistance rating for steady-state operation.
Part Context
This device belongs to the DMC6070 series of advanced MOSFETs designed for high-efficiency power management. It utilizes the POWERDI3333-8 surface-mount package, which offers a small form factor while maintaining adequate thermal dissipation capabilities for low-power switching applications.
Replacement Considerations
Consult official manufacturer substitution guides for verified alternatives. Generic cross-references may not match the specific electrical characteristics or pinout configurations of the original complementary pair design.
