DMC62D2SV-13

DMC62D2SV-13

$0.05
  • Description:MOSFET N/P-CH 60V 0.48A SOT563
  • Series:-

SKU:956ad30dba01 Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:MOSFET N/P-CH 60V 0.48A SOT563
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:N and P-Channel Complementary
  • FET Feature:-
  • Drain to Source Voltage (Vdss):60V
  • Current - Continuous Drain (Id) @ 25°C:480mA (Ta), 320mA (Ta)
  • Rds On (Max) @ Id, Vgs:1.7Ohm @ 200mA, 10V, 4Ohm @ 200mA, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 250µA, 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:1.04nC @ 10V, 1.1nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:41pF @ 30V, 40pF @ 25V
  • Power - Max:500mW (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:SOT-563
  • Grade:-
  • Qualification:-

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DMC62D2SV-13

Overview

The DMC62D2SV-13 is a complementary pair enhancement mode MOSFET manufactured by Diodes Incorporated in an SOT563 package. It integrates an N-channel device (Q1) and a P-channel device (Q2). The N-channel transistor features a drain-source voltage of 60V, a maximum continuous drain current of 480mA at +25°C, and a static on-resistance of 1.7Ω at VGS=10V. The P-channel transistor has a -60V breakdown voltage, a -320mA continuous drain current, and an on-resistance of 4Ω at VGS=-10V. Total power dissipation is rated at 0.5W with a thermal resistance of 261°C/W under steady-state conditions.

Feature Summary

  • Complementary N-channel and P-channel configuration for general-purpose interfacing and analog switching
  • Optimized low on-resistance combined with fast switching speed for high efficiency power management
  • Ultra-small surface mount SOT563 package design

Applications

  • General-purpose interfacing switches
  • Power management functions
  • Analog switches

Procurement Notes

Verify the specific ordering suffix to confirm the tape and reel quantity matches project requirements. The -13 suffix indicates a packing quantity of 10,000 units. Confirm RoHS compliance and halogen-free status through official manufacturer documentation before finalizing procurement specifications.

Selection Notes

Select this component when a compact dual-transistor solution is required for low-voltage signal routing or power control. Ensure the application current remains within the 480mA limit for the N-channel and 320mA for the P-channel at ambient temperatures up to 25°C. Verify that the gate drive voltage meets the threshold requirements for optimal on-resistance performance.

Part Context

This part belongs to the DMC62D series of complementary MOSFETs from Diodes Incorporated. It shares the same functional architecture as variants like the DMC62D0SV and DMC62D3SV but differs in specific electrical parameters and packaging quantities. The -13 suffix specifically denotes the 10,000-unit tape and reel packaging format.

Replacement Considerations

Direct replacements include other DMC62D series parts such as DMC62D0SV or DMC62D3SV if pin compatibility and electrical ratings are sufficient. Verify that any substitute maintains the SOT563 footprint and meets the required voltage and current specifications for the target circuit.

FAQ

What is the maximum continuous drain current for the N-channel device?

The maximum continuous drain current for the N-channel device (Q1) is 480mA at an ambient temperature of +25°C.

Does the DMC62D2SV support automotive applications?

For automotive applications requiring AEC-Q100/101 qualification and IATF 16949 manufacturing, customers must contact Diodes Incorporated directly, as standard production may not automatically meet these specific change control requirements.

What is the typical input capacitance of the N-channel transistor?

The typical input capacitance (Ciss) for the N-channel device is 41pF, measured at VDS=30V, VGS=0V, and f=1.0MHz.

DMC62D2SV-13DMC62D2SV-13
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