SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The DMC62D2SV-13 is a complementary pair enhancement mode MOSFET manufactured by Diodes Incorporated in an SOT563 package. It integrates an N-channel device (Q1) and a P-channel device (Q2). The N-channel transistor features a drain-source voltage of 60V, a maximum continuous drain current of 480mA at +25°C, and a static on-resistance of 1.7Ω at VGS=10V. The P-channel transistor has a -60V breakdown voltage, a -320mA continuous drain current, and an on-resistance of 4Ω at VGS=-10V. Total power dissipation is rated at 0.5W with a thermal resistance of 261°C/W under steady-state conditions.
Verify the specific ordering suffix to confirm the tape and reel quantity matches project requirements. The -13 suffix indicates a packing quantity of 10,000 units. Confirm RoHS compliance and halogen-free status through official manufacturer documentation before finalizing procurement specifications.
Select this component when a compact dual-transistor solution is required for low-voltage signal routing or power control. Ensure the application current remains within the 480mA limit for the N-channel and 320mA for the P-channel at ambient temperatures up to 25°C. Verify that the gate drive voltage meets the threshold requirements for optimal on-resistance performance.
This part belongs to the DMC62D series of complementary MOSFETs from Diodes Incorporated. It shares the same functional architecture as variants like the DMC62D0SV and DMC62D3SV but differs in specific electrical parameters and packaging quantities. The -13 suffix specifically denotes the 10,000-unit tape and reel packaging format.
Direct replacements include other DMC62D series parts such as DMC62D0SV or DMC62D3SV if pin compatibility and electrical ratings are sufficient. Verify that any substitute maintains the SOT563 footprint and meets the required voltage and current specifications for the target circuit.
The maximum continuous drain current for the N-channel device (Q1) is 480mA at an ambient temperature of +25°C.
For automotive applications requiring AEC-Q100/101 qualification and IATF 16949 manufacturing, customers must contact Diodes Incorporated directly, as standard production may not automatically meet these specific change control requirements.
The typical input capacitance (Ciss) for the N-channel device is 41pF, measured at VDS=30V, VGS=0V, and f=1.0MHz.