DME2029-000

RF Diode Overview

The DME2029-000 is a beam-lead silicon Schottky barrier mixer diode configured as a bridge quad. It operates in the S and C frequency bands (2 to 8 GHz). Key electrical specifications include a junction capacitance of 0.30 to 0.50 pF at 0 V, 1 MHz, and a series resistance of 5 Ω at 5 mA. The device features a medium drive level with a barrier voltage of 3 V at 10 μA and a forward voltage ranging from 300 to 400 mV at 1 mA. Absolute maximum ratings specify a continuous wave power dissipation of 75 mW per junction and a maximum current of 100 mA. Operating and storage temperatures range from -65°C to +175°C.

RF Diode Feature Summary

• Beam-lead design facilitates bonding to small area low capacitance junctions for close impedance control.
• Statistical Process Control wafer fabrication ensures uniformity and narrow spread of capacitance values.
• Low parasitics and uniformity make the device well suited for balanced mixer applications.

RF Diode Applications

• Microwave Integrated Circuits
• Mixers
• Detectors

RF Diode Procurement Notes

Verify component authenticity by checking manufacturer markings against official datasheet outline drawings. Confirm package type matches the specified bridge quad configuration. Ensure handling procedures strictly follow electrostatic discharge precautions due to device sensitivity. Validate that the operating environment remains within the stated temperature and power dissipation limits.

RF Diode Selection Notes

Select this part for S and C band applications requiring medium local oscillator drive levels. Compare junction capacitance and series resistance against circuit requirements for impedance matching. Evaluate the forward voltage characteristics to ensure compatibility with available drive power. Consider the beam-lead package dimensions when designing the substrate layout.

RF Diode Part Context

This component belongs to the Skyworks DME, DMF, and DMJ series of silicon beam-lead Schottky mixer diodes. The series covers various configurations including singles, pairs, common cathodes, anti-parallel pairs, ring quads, and bridge quads across S, C, X, Ku, K, and Ka bands. The DME designation specifically indicates a medium drive level N-type device.

RF Diode Replacement Considerations

Other devices within the same datasheet family may serve as alternatives. Potential substitutes include the DMF2076-000 for low drive or the DMJ2312-000 for high drive applications in the S and C bands. Verify that any replacement maintains the required bridge quad configuration and compatible electrical parameters.