RF Diode DME2333-000 product image

DME2333-000

  • Description:RF DIODE SCHOTTKY 3V 75MW
  • Series:-

SKU:9b151ba696fd Category: Brand:

ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

DME2333-000 is listed in the RF Diode range at ChipApex. The manufacturer field lists Skyworks Solutions Inc.. Its product description is RF DIODE SCHOTTKY 3V 75MW. Review the specifications below when checking this part for your BOM.

RF Diode specifications for DME2333-000

  • Description:RF DIODE SCHOTTKY 3V 75MW
  • Series:-
  • Mfr:Skyworks Solutions Inc.
  • Package:Bulk
  • Diode Type:Schottky - Single
  • Voltage - Peak Reverse (Max):3V
  • Current - Max:100 mA
  • Capacitance @ Vr, F:0.15pF @ 0V, 1MHz
  • Resistance @ If, F:13Ohm @ 5mA, 18GHz
  • Power Dissipation (Max):75 mW
  • Operating Temperature:-65°C ~ 175°C (TA)
  • Package / Case:2-SMD, Flat Leads
  • Supplier Device Package:-
  • Grade:-
  • Qualification:-

RF Diode datasheet and documents for DME2333-000

DME2333-000

RF Diode Overview

The DME2333-000 is a beam-lead silicon Schottky barrier mixer diode from the Skyworks DME series, designed for Ku-band applications (12.4 to 18.0 GHz). It features a medium drive level with a junction capacitance of 0.05 to 0.15 pF at 0 V and a series resistance of 13 Ω at 5 mA. The device has a breakdown voltage of 3 V at 10 μA and a forward voltage of 350 to 450 mV at 1 mA. It operates within a temperature range of -65°C to +175°C and supports a maximum continuous power dissipation of 75 mW per junction.

RF Diode Feature Summary

  • Beam-lead design facilitates bonding to small low-capacitance junctions
  • Low parasitics and uniformity suitable for balanced mixer configurations
  • Statistical Process Control wafer fabrication ensures consistent performance

RF Diode Applications

  • Microwave Integrated Circuits (MICs)
  • Ku-band mixers
  • Detectors
  • Modulators
  • High-speed switches

RF Diode Procurement Notes

Verify the specific ordering suffix against the manufacturer's current documentation to ensure correct package type and electrical characteristics. Confirm RoHS compliance status and environmental declarations prior to procurement. Check for any product discontinuation notices or lifecycle changes that may affect long-term availability.

RF Diode Selection Notes

Select this component for Ku-band designs requiring medium local oscillator drive levels. Compare junction capacitance and series resistance against circuit impedance requirements. Ensure the operating temperature range aligns with system thermal constraints. Verify compatibility with beam-lead bonding techniques used in the target assembly process.

RF Diode Part Context

This part belongs to the DME, DMF, and DMJ series of silicon beam-lead Schottky mixer diodes. The series covers S, C, X, Ku, K, and Ka bands. The DME prefix specifically denotes medium drive devices, while DMF indicates low drive and DMJ indicates high drive options within the same frequency band categories.

RF Diode Replacement Considerations

Direct replacements include other DME series parts for different frequency bands, such as DME2957-000 for X-band or DME2458-000 for K/Ka-band. Alternative packages like pairs or quads (e.g., DME2830-000) may be considered if circuit topology allows.

DME2333-000DME2333-000

Click on the inquiry