RF Diode DME2458-000 product image

DME2458-000

$11.19
  • Description:RF DIODE SCHOTTKY 3V 75MW
  • Series:-

SKU:a18777972f43 Category: Brand:

  
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DME2458-000 is listed in the RF Diode range at ChipApex. The manufacturer field lists Skyworks Solutions Inc.. Its product description is RF DIODE SCHOTTKY 3V 75MW. Review the specifications below when checking this part for your BOM.

RF Diode specifications for DME2458-000

  • Description:RF DIODE SCHOTTKY 3V 75MW
  • Series:-
  • Mfr:Skyworks Solutions Inc.
  • Package:Bulk
  • Diode Type:Schottky - Single
  • Voltage - Peak Reverse (Max):3V
  • Current - Max:100 mA
  • Capacitance @ Vr, F:0.1pF @ 0V, 1MHz
  • Resistance @ If, F:18Ohm @ 5mA, 40GHz
  • Power Dissipation (Max):75 mW
  • Operating Temperature:-65°C ~ 175°C (TA)
  • Package / Case:2-SMD, Flat Leads
  • Supplier Device Package:-
  • Grade:-
  • Qualification:-

RF Diode datasheet and documents for DME2458-000

DME2458-000

RF Diode Overview

The DME2458-000 is a beam-lead silicon Schottky barrier mixer diode designed for applications through 40 GHz. It belongs to the medium drive category within the DME, DMF, and DMJ series. The device operates in the K band (18.0 to 26.5 GHz) and Ka band (26.5 to 40.0 GHz). Electrical specifications include a maximum junction capacitance of 0.1 pF at 0 V and 1 MHz, a typical series resistance of 18 Ω at 5 mA, and a forward voltage ranging from 375 mV to 550 mV at 1 mA. The absolute maximum ratings specify a continuous wave power dissipation of 75 mW per junction and an operating temperature range from -65 °C to +175 °C.

RF Diode Feature Summary

  • Beam-lead design reduces bonding challenges associated with low capacitance junctions
  • Statistical process control wafer fabrication ensures uniformity
  • Low parasitics suitable for balanced mixer configurations

RF Diode Applications

  • Microwave Integrated Circuits
  • Mixers
  • Detectors

RF Diode Procurement Notes

Verify the specific package outline drawing required for the application, as the datasheet lists multiple configurations such as single, pair, common cathode, anti-parallel, ring quad, and bridge quad. Confirm that the selected configuration matches the intended circuit topology before procurement. Ensure handling procedures account for electrostatic discharge sensitivity.

RF Diode Selection Notes

Select this component based on the required frequency band coverage, specifically the K and Ka bands. The medium drive classification indicates suitability for local oscillator drive levels between low and high extremes. Verify that the maximum junction capacitance and series resistance values align with the impedance matching requirements of the target microwave integrated circuit design.

RF Diode Part Context

This part is part of the Skyworks DME, DMF, and DMJ series of silicon beam-lead Schottky mixer diodes. The series covers S, C, X, Ku, K, and Ka frequency bands. Variations exist in drive levels (low, medium, high) and internal configurations (single, pairs, quads). The DME2458-000 specifically represents the medium drive option for the higher frequency ranges.

RF Diode Replacement Considerations

Compatible substitutes within the same family include DME2831-000 (K, Ka band, medium drive, series pair), DME2864-000 (K, Ka band, medium drive, common cathode), DME2838-000 (K, Ka band, medium drive, anti-parallel), and DME2459-000 (K, Ka band, medium drive, ring quad). Selection depends on the required internal connection topology.

DME2458-000DME2458-000
$11.19
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