RF Diode DME2830-000 product image

DME2830-000

$7.85
  • Description:RF DIODE SCHOTTKY 75MW
  • Series:DME

SKU:00030b4698bf Category: Brand:

  
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DME2830-000 is listed in the RF Diode range at ChipApex. The manufacturer field lists Skyworks Solutions Inc.. Its product description is RF DIODE SCHOTTKY 75MW. Review the specifications below when checking this part for your BOM.

RF Diode specifications for DME2830-000

  • Description:RF DIODE SCHOTTKY 75MW
  • Series:DME
  • Mfr:Skyworks Solutions Inc.
  • Package:Tray
  • Diode Type:Schottky - 1 Pair Series Connection
  • Voltage - Peak Reverse (Max):-
  • Current - Max:100 mA
  • Capacitance @ Vr, F:-
  • Resistance @ If, F:-
  • Power Dissipation (Max):75 mW
  • Operating Temperature:-65°C ~ 175°C (TA)
  • Package / Case:3-SMD, Flat Leads
  • Supplier Device Package:-
  • Grade:-
  • Qualification:-

RF Diode datasheet and documents for DME2830-000

DME2830-000

RF Diode Overview

The DME2830-000 is a beam-lead silicon Schottky mixer diode from the Skyworks DMJ series, configured as a series pair. Designed for Ku-band applications (12.4 to 18.0 GHz), it features medium drive characteristics with a junction capacitance of 0.05 to 0.15 pF and a series resistance of 13 Ω at 5 mA. The device has a breakdown voltage of 3 V at 10 μA and a forward voltage range of 350 to 450 mV at 1 mA. It operates within a temperature range of -65°C to +175°C and supports a maximum continuous power dissipation of 75 mW per junction.

RF Diode Feature Summary

  • Beam-lead design reduces bonding challenges associated with low capacitance junctions.
  • Statistical Process Control wafer fabrication ensures uniformity and close impedance control.
  • Low intermodulation distortion suitable for balanced mixer configurations.

RF Diode Applications

  • Microwave Integrated Circuits
  • Mixers
  • Detectors

RF Diode Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and check for specific lot traceability requirements before procurement. Ensure proper ESD handling protocols are followed during storage and installation due to the sensitivity of the beam-lead structure.

RF Diode Selection Notes

Select this part for Ku-band designs requiring medium local oscillator drive levels. Compare against DMF2827-000 for low drive or DMJ2832-000 for high drive needs. Verify that the 0.05 to 0.15 pF capacitance aligns with the target circuit's impedance matching network requirements.

RF Diode Part Context

This component belongs to the DME, DMF, and DMJ series of beam-lead Schottky mixer diodes. These devices cover frequency ranges from S-band up to Ka-band. The DME2830-000 specifically addresses Ku-band requirements using a series pair configuration, offering a balance between drive level and performance metrics compared to single or quad variants.

RF Diode Replacement Considerations

Direct functional substitutes within the same series include DMF2827-000 for lower drive applications and DMJ2832-000 for higher drive scenarios. Cross-series replacements require careful re-evaluation of capacitance and series resistance parameters to ensure circuit stability.

DME2830-000DME2830-000
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