DME2857-000

RF Diode Overview

The DME2857-000 is a beam-lead silicon Schottky barrier mixer diode configured as a ring quad. It operates in the S and C frequency bands, covering 2 to 8 GHz. The device features medium drive characteristics with a maximum junction capacitance of 0.30 to 0.50 pF at 0 V and 1 MHz. Series resistance is specified between 5 and 8 ohms at 5 mA, while forward voltage ranges from 300 to 400 mV at 1 mA. Absolute maximum ratings include a continuous wave power dissipation of 75 mW per junction and an operating temperature range from -65°C to +175°C.

RF Diode Feature Summary

• Beam-lead design facilitates bonding to small area low capacitance junctions
• Low intermodulation distortion for balanced mixer applications
• Statistical process control wafer fabrication ensures uniformity

RF Diode Applications

• Microwave Integrated Circuits (MICs)
• Balanced mixers
• Detectors

RF Diode Procurement Notes

Verify the specific datasheet revision and electrical parameters against the manufacturer's official documentation before finalizing procurement. Confirm that the component meets all applicable environmental compliance standards required for the intended deployment environment.

RF Diode Selection Notes

Select this part for S and C band applications requiring medium local oscillator drive levels. Ensure the system design accommodates the specified series resistance and junction capacitance values to maintain impedance control within the target frequency range.

RF Diode Part Context

This component belongs to the Skyworks DME, DMF, and DMJ series of silicon beam-lead Schottky mixer diodes. The series covers frequency ranges from S-band through Ka-band, offering various configurations including singles, pairs, common cathodes, anti-parallel pairs, and quads.

RF Diode Replacement Considerations

DME2858-000 (X-Band Ring Quad) and DME2859-000 (Ku-Band Ring Quad) are available within the same package outline and configuration family.