DME375A

Overview

The DME375A is an NPN bipolar RF transistor manufactured by Microsemi Corporation, designed for high-power applications. It operates within a frequency range of 1.025 GHz to 1.15 GHz and delivers a maximum power output of 375W. The device features a collector-emitter breakdown voltage of 55V and supports a maximum collector current of 30A. With a typical gain of 6.5 dB and a junction temperature rating of 200°C, it utilizes a chassis mount configuration (package 55AW). This component is suitable for pulsed avionics systems operating in the specified UHF band.

Feature Summary

• High power output capability of 375W for demanding RF applications
• Operates effectively within the 1.025 GHz to 1.15 GHz frequency spectrum
• Robust thermal performance with a maximum junction temperature of 200°C
• Designed specifically for pulsed avionics and military-grade environments

Applications

• Pulsed avionics radar systems
• UHF transmitter modules
• Military communication equipment
• High-power RF amplification stages

Procurement Notes

Verify that the specific order includes the correct chassis mount variant (55AW) required for your thermal management design. Confirm compatibility with the 55V collector-emitter voltage limits for your circuit topology. Ensure sourcing channels provide authentic Microsemi Corporation components to guarantee reliability in critical avionics or defense applications. Check datasheet revisions for any updates to mechanical dimensions or electrical characteristics prior to final integration.

Selection Notes

Select the DME375A when a high-power NPN solution is required for the 1.025–1.15 GHz band. Consider its 375W power handling and 30A current capacity against your load requirements. Evaluate the chassis mount style against available cooling infrastructure, as thermal dissipation is critical at this power level. Compare gain specifications against system noise and efficiency targets to ensure adequate signal amplification without excessive heat generation beyond the 200°C junction limit.

Part Context

This component belongs to Microsemi's lineup of high-power bipolar RF transistors. It is engineered for rugged environments where reliability under high stress is paramount. The device complements other UHF band solutions by offering substantial power density in a standardized chassis package. Its design aligns with industry standards for avionics and defense electronics, ensuring interoperability with established system architectures requiring robust RF power generation.

Replacement Considerations

No public confirmed substitute part numbers are identified in the provided documentation. Direct replacement requires matching the 375W power rating, 55V breakdown voltage, and 55AW chassis package dimensions. Verify pinout compatibility and thermal resistance values before considering alternative manufacturers. Consult Microsemi technical support for validated cross-reference options if the original component is unavailable.