DME50B010R

Overview

The DME50B010R is a composite transistor in the SMini5 package containing one PNP (Tr1) and one NPN (Tr2) silicon epitaxial planar transistor. It features a maximum collector current of 100 mA per device, with peak currents reaching 200 mA. The transition frequency is 150 MHz, and the minimum forward current transfer ratio (hFE) is 210 at 2 mA. Collector-emitter saturation voltages are specified at 0.2 V for Tr1 and 0.13 V for Tr2 under standard test conditions. Total power dissipation is limited to 150 mW, with an operating temperature range from -40°C to +85°C.

Feature Summary

• High forward current transfer ratio with excellent linearity
• Low collector-emitter saturation voltage
• Halogen-free and RoHS compliant construction

Applications

• General amplification circuits
• Office equipment signal processing
• Household appliance control logic

Procurement Notes

Verify component authenticity through authorized Panasonic Industry channels or certified distributors. Confirm that the marking symbol matches A3 on the package surface. Ensure storage conditions adhere to the specified shelf life limits before opening the embossed carrier tape packaging.

Selection Notes

Select this component when a dual complementary pair is required in a compact footprint. Verify that the 150 mW total power dissipation rating accommodates the thermal design constraints. Ensure the circuit operates within the -40°C to +85°C ambient temperature range for guaranteed performance.

Part Context

This part belongs to the DME50B01 series manufactured by Panasonic Industry. It utilizes the SMini5-F3-B package, which corresponds to the JEITA SC-113CB code and the industry-standard SOT-353 outline. The '0R' suffix indicates the specific reel packaging configuration.

Replacement Considerations

The datasheet lists DSA2001 and DSC2001 as basic parts for emitter-base connection configurations. Verify pinout compatibility and electrical parameters against these alternatives before substitution.