RF Diode DMF2011-000 product image

DMF2011-000

$7.99
  • Description:RF DIODE SCHOTTKY 75MW
  • Series:DMF

SKU:3238a79c4af7 Category: Brand:

  
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DMF2011-000 is listed in the RF Diode range at ChipApex. The manufacturer field lists Skyworks Solutions Inc.. Its product description is RF DIODE SCHOTTKY 75MW. Review the specifications below when checking this part for your BOM.

RF Diode specifications for DMF2011-000

  • Description:RF DIODE SCHOTTKY 75MW
  • Series:DMF
  • Mfr:Skyworks Solutions Inc.
  • Package:Tray
  • Diode Type:Schottky - Ring
  • Voltage - Peak Reverse (Max):-
  • Current - Max:100 mA
  • Capacitance @ Vr, F:-
  • Resistance @ If, F:-
  • Power Dissipation (Max):75 mW
  • Operating Temperature:-65°C ~ 175°C (TA)
  • Package / Case:4-SMD, Flat Leads
  • Supplier Device Package:-
  • Grade:-
  • Qualification:-

RF Diode datasheet and documents for DMF2011-000

DMF2011-000

RF Diode Overview

The DMF2011-000 is a beam-lead silicon Schottky mixer diode from Skyworks Solutions, designed for applications through 40 GHz. It belongs to the DMF series, representing low drive level devices. This component is configured as a Ring Quad and operates in the X-band frequency range of 8.2 to 12.4 GHz. Key electrical specifications include a maximum junction capacitance (CJ) of 0.30 pF at 0 V and 1 MHz, with a minimum of 0.15 pF. The series resistance (RS) is specified at 8 Ω measured at 5 mA. The barrier voltage (VB) is 2 V at 10 μA, and the forward voltage (VF) ranges from 220 mV to 300 mV at 1 mA. The device utilizes the 488-002 outline drawing package.

RF Diode Feature Summary

  • Beam-lead design reduces bonding challenges associated with small low-capacitance junction areas.
  • Statistical Process Control wafer fabrication ensures uniformity and close impedance control.
  • Low parasitics and uniformity make the device well-suited for balanced mixer configurations.

RF Diode Applications

  • Microwave Integrated Circuits (MICs)
  • Mixers
  • Detectors

RF Diode Procurement Notes

Verify the specific datasheet revision and manufacturing date code upon order confirmation. Confirm that the required packaging format matches the standard beam-lead handling requirements. Ensure all static-sensitive precautions are strictly followed during receipt and storage to prevent electrostatic discharge damage to the delicate beam leads.

RF Diode Selection Notes

Select this part when designing X-band systems requiring low local oscillator drive levels. The low drive characteristic makes it appropriate for starved LO applications where minimizing power consumption is critical. Verify that the 0.15 to 0.30 pF capacitance range aligns with the target circuit's impedance matching network requirements.

RF Diode Part Context

This component is part of the DME, DMF, and DMJ series of Silicon Beam-Lead Schottky Mixer Diodes. The series includes singles, pairs, common cathodes, anti-parallel pairs, ring quads, and bridge quads. The DMF designation specifically identifies low drive level N-type devices within this family.

RF Diode Replacement Considerations

Other parts in the same outline drawing 488-002 package may serve as alternatives if electrical parameters match. Consider the DME2858-000 for medium drive or DMJ2990-000 for high drive applications within the same X-band frequency range.

DMF2011-000DMF2011-000
$7.99
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