RF Diode DMF2454-000 product image

DMF2454-000

$7.99
  • Description:RF DIODE SCHOTTKY 75MW
  • Series:DMF

SKU:f41e44151283 Category: Brand:

  
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DMF2454-000 is listed in the RF Diode range at ChipApex. The manufacturer field lists Skyworks Solutions Inc.. Its product description is RF DIODE SCHOTTKY 75MW. Review the specifications below when checking this part for your BOM.

RF Diode specifications for DMF2454-000

  • Description:RF DIODE SCHOTTKY 75MW
  • Series:DMF
  • Mfr:Skyworks Solutions Inc.
  • Package:Tray
  • Diode Type:Schottky - Ring
  • Voltage - Peak Reverse (Max):-
  • Current - Max:100 mA
  • Capacitance @ Vr, F:-
  • Resistance @ If, F:-
  • Power Dissipation (Max):75 mW
  • Operating Temperature:-65°C ~ 175°C (TA)
  • Package / Case:4-SMD, Flat Leads
  • Supplier Device Package:-
  • Grade:-
  • Qualification:-

RF Diode datasheet and documents for DMF2454-000

DMF2454-000

RF Diode Overview

The DMF2454-000 is a beam-lead silicon Schottky barrier mixer diode from the Skyworks DME, DMF, and DMJ series. It is configured as a ring quad suitable for K-band (18.0 to 26.5 GHz) and Ka-band (26.5 to 40.0 GHz) applications. The device features low forward voltage characteristics with a maximum junction capacitance of 0.1 pF at 0 V and 1 MHz, and a typical series resistance of 18 Ω at 5 mA. It operates within an ambient temperature range of -65°C to +175°C and supports a continuous wave power dissipation of 75 mW per junction.

RF Diode Feature Summary

  • Beam-lead design reduces bonding challenges associated with small low-capacitance junction areas.
  • Low parasitic elements and uniformity make it well-suited for balanced mixer configurations.
  • Statistical Process Control wafer fabrication ensures close impedance control through narrow spreads in capacitance values.

RF Diode Applications

  • Microwave Integrated Circuits (MICs)
  • K-band and Ka-band mixers
  • Modulators and high-speed switches

RF Diode Procurement Notes

Verify component authenticity by checking datasheet revision numbers against official Skyworks documentation. Confirm that the specific ordering suffix matches the required drive level and package outline drawing. Ensure handling procedures strictly follow industry-standard electrostatic discharge precautions during installation.

RF Diode Selection Notes

Select this part when designing circuits requiring low-drive performance in the K or Ka frequency bands. Evaluate local oscillator drive requirements against the specified forward voltage range to ensure optimal conversion loss and distortion characteristics. Verify that the beam-lead package dimensions align with the intended substrate layout.

RF Diode Part Context

This component belongs to the DME, DMF, and DMJ series of silicon beam-lead Schottky mixer diodes. The series covers S, C, X, Ku, K, and Ka frequency bands. Variations exist for singles, pairs, common cathodes, anti-parallel pairs, ring quads, and bridge quads, differentiated primarily by internal configuration and drive levels.

RF Diode Replacement Considerations

Other devices within the DME, DMF, and DMJ series may serve as alternatives if they match the required frequency band and electrical specifications. Substitutes must be verified against the same outline drawing number to ensure physical compatibility with existing board layouts.

RF Diode FAQ

What is the maximum operating temperature for the DMF2454-000?

The absolute maximum operating temperature is +175°C.

How does the beam-lead design benefit this mixer diode?

The beam-lead design addresses bonding difficulties on very small low-capacitance junction areas, facilitating easier integration into microwave integrated circuits.

Is this device suitable for use as a detector?

Yes, the datasheet indicates that these beam-lead Schottky barrier mixer diodes can also be used as detectors.

DMF2454-000DMF2454-000
$7.99
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