DMF2827-000

RF Diode Overview

The DMF2827-000 is a beam-lead silicon Schottky barrier mixer diode configured as a series pair. Designed for Ku-band applications (12.4 to 18.0 GHz), it features low forward voltage characteristics suitable for starved local oscillator drive levels. Key electrical specifications include a maximum junction capacitance of 0.15 pF at 0 V and 1 MHz, a typical series resistance of 13 Ω at 5 mA, and a turn-on voltage of 2 V at 10 μA. The device supports a continuous wave power dissipation of 75 mW per junction and operates within a temperature range of -65°C to +175°C.

RF Diode Feature Summary

• Beam-lead design reduces bonding challenges associated with small low-capacitance junctions
• Statistical process control wafer fabrication ensures uniformity and close impedance control
• Low parasitics and low intermodulation distortion support balanced mixer configurations

RF Diode Applications

• Microwave Integrated Circuits (MICs)
• Ku-band mixers
• Detectors
• Modulators
• High-speed switches

RF Diode Procurement Notes

Verify the specific ordering suffix and package outline drawing against current Skyworks documentation before procurement. Confirm RoHS compliance status and check for any product change notifications or end-of-life notices that may affect long-term availability. Ensure handling procedures account for the sensitivity of beam-lead structures to electrostatic discharge.

RF Diode Selection Notes

Select this component when Ku-band operation between 12.4 and 18.0 GHz is required with low local oscillator drive capabilities. The series pair configuration is optimal for balanced mixer topologies requiring matched diode characteristics. Compare the 13 Ω series resistance and 0.15 pF maximum capacitance against circuit requirements to ensure proper impedance matching and conversion loss performance.

RF Diode Part Context

This part belongs to the DME, DMF, and DMJ series of silicon beam-lead Schottky mixer diodes. The 'DMF' designation indicates an N-type low-drive device, while the '2827' identifier specifies the Ku-band frequency range and series pair topology. These devices are categorized by universal mixer applications across S, C, X, Ku, K, and Ka bands.

RF Diode Replacement Considerations

Direct replacements within the same series include other Ku-band series pairs such as DME2830-000 (medium drive) or DMJ2832-000 (high drive). For different topologies in the Ku band, consider DMF2184-000 (common cathode) or DMF2187-000 (anti-parallel). Verify that the alternative drive level matches the local oscillator power available in the target application.

RF Diode FAQ

What is the maximum operating frequency for the DMF2827-000?

The DMF2827-000 is designed for Ku-band applications, covering frequencies from 12.4 GHz to 18.0 GHz.

How does the beam-lead design benefit this mixer diode?

The beam-lead design eliminates bonding difficulties to very small junction areas characteristic of low capacitance devices, resulting in low series resistance and narrow capacitance spread for precise impedance control.

What is the recommended drive level for this component?

As a DMF series device, it is specified for low drive levels, making it suitable for applications with low or starved local oscillator drive requirements.