Single FETs, MOSFETs DMG1012TQ-7 product image

DMG1012TQ-7

$0.12
  • Description:MOSFET N-CH 20V 630MA SOT523
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:d19ab223f4a2 Category: Brand:

  
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DMG1012TQ-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 20V 630MA SOT523. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMG1012TQ-7

  • Description:MOSFET N-CH 20V 630MA SOT523
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):20 V
  • Current - Continuous Drain (Id) @ 25°C:630mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs:400mOhm @ 600mA, 4.5V
  • Vgs(th) (Max) @ Id:1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:0.74 nC @ 4.5 V
  • Vgs (Max):±6V
  • Input Capacitance (Ciss) (Max) @ Vds:60.67 pF @ 16 V
  • FET Feature:-
  • Power Dissipation (Max):280mW (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Supplier Device Package:SOT-523
  • Package / Case:SOT-523

Single FETs, MOSFETs datasheet and documents for DMG1012TQ-7

DMG1012TQ-7

Single FETs, MOSFETs Overview

The DMG1012TQ-7 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a SOT-523 package and operates with a drain-source voltage of 20 V and a continuous drain current of 630 mA at +25°C. The device exhibits a maximum on-resistance of 400 mΩ at VGS = 4.5V and ID = 600mA, with a gate threshold voltage ranging from 0.5 V to 1.0 V. Electrical characteristics include a total gate charge of 736.6 pC, input capacitance of 60.67 pF, turn-on rise time of 7.4 ns, and turn-off fall time of 12.3 ns. It supports an operating temperature range from -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

  • Low on-resistance for efficient power handling
  • Fast switching speed capabilities
  • ESD protection up to 2kV
  • Totally lead-free and fully RoHS compliant

Single FETs, MOSFETs Applications

  • Automotive applications requiring specific change control
  • General purpose low-side switching
  • Power management circuits

Single FETs, MOSFETs Procurement Notes

Verify the component matches the exact part number DMG1012TQ-7 before procurement. Confirm that the supplier provides documentation proving AEC-Q101 qualification if automotive use is intended. Ensure the received units are in the correct SOT-523 package and match the manufacturer's marking codes. Request batch-specific test reports to validate electrical parameters against the datasheet limits.

Single FETs, MOSFETs Selection Notes

Select this component when a compact N-channel MOSFET with low on-resistance is required for space-constrained designs. The SOT-523 package offers a small footprint suitable for dense PCB layouts. Consider the 20 V breakdown voltage and 630 mA current rating to ensure adequate headroom for the target application. Verify thermal performance requirements against the specified junction-to-ambient thermal resistance.

Single FETs, MOSFETs Part Context

This component belongs to the DMG1012T series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. The 'Q' suffix typically denotes automotive-grade qualification, while the '-7' indicates tape and reel packaging. It is designed for applications requiring high efficiency and fast switching in a miniature surface-mount package.

Single FETs, MOSFETs Replacement Considerations

Consult the official Diodes Incorporated cross-reference tools or contact their sales representatives for verified substitute part numbers. Do not assume functional equivalence based solely on package type or general specifications.

DMG1012TQ-7DMG1012TQ-7
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