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DMG1012UWQ-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET BVDSS: 8V~24V SOT323 T&R. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for DMG1012UWQ-7
- Description：MOSFET BVDSS: 8V~24V SOT323 T&R
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：950mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：450mOhm @ 600mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1 nC @ 4.5 V
- Vgs (Max)：±6V
- Input Capacitance (Ciss) (Max) @ Vds：43 pF @ 16 V
- FET Feature：-
- Power Dissipation (Max)：460mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-323
- Package / Case：SC-70, SOT-323
Single FETs, MOSFETs datasheet and documents for DMG1012UWQ-7
Single FETs, MOSFETs Overview
The DMG1012UWQ-7 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated in a SOT323 surface-mount package. It features a drain-source voltage (BVDSS) of 20V and a gate-source voltage (VGSS) rating of ±6V. The device supports a continuous drain current up to 0.95A at +25°C, with a maximum on-resistance (RDS(ON)) of 0.45Ω at VGS=4.5V. It operates within a temperature range of -55°C to +150°C.
Single FETs, MOSFETs Feature Summary
- Low on-state resistance for high efficiency power management
- Fast switching speed with low input capacitance
- Low gate threshold voltage enabling effective drive control
- ESD protected and fully RoHS compliant
Single FETs, MOSFETs Applications
- General purpose interfacing switch
- Power management functions
- DC-DC converters
- Analog switch applications
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix matches the required packaging quantity. Confirm that the component meets AEC-Q101 qualification requirements if intended for automotive use. Ensure the design accommodates the thermal characteristics specified in the datasheet for the selected mounting conditions.
Single FETs, MOSFETs Selection Notes
Select this component when a compact N-channel MOSFET with low on-resistance is required for space-constrained designs. Consider the 20V breakdown voltage and 0.95A current capability against the load requirements. Evaluate the thermal resistance values based on the expected PCB copper area and ambient operating conditions.
Single FETs, MOSFETs Part Context
This part belongs to the DMG1012UWQ series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes a SOT323 case style designed for surface mount technology. The product line emphasizes minimizing on-state resistance while maintaining superior switching performance for efficient power management solutions.
Single FETs, MOSFETs Replacement Considerations
Consult official manufacturer documentation for verified substitute part numbers. Cross-reference electrical parameters such as BVDSS, RDS(ON), and package dimensions before implementation.
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