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Product Detailed Parameters
- Description：MOSFET N/P-CH 20V SOT363
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：1.07A, 845mA
- Rds On (Max) @ Id, Vgs：450mOhm @ 600mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.74nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：60.67pF @ 10V
- Power - Max：330mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SOT-363
- Grade：-
- Qualification：-
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Overview
The DMG1016UDW-7 is a complementary pair enhancement mode MOSFET manufactured by Diodes Incorporated. It integrates an N-channel device (Q1) and a P-channel device (Q2) within a single SOT363 surface-mount package. The N-channel transistor supports a drain-source voltage of 20V with a continuous drain current of 1066mA at +25°C, while the P-channel counterpart handles -20V and -845mA. Both devices feature low on-state resistance, specifically 0.45Ω for Q1 and 0.75Ω for Q2 at VGS = ±4.5V. The component operates across a temperature range of -55°C to +150°C with a total power dissipation rating of 330mW.
Feature Summary
- Complementary Pair Configuration
- Low On-Resistance
- Fast Switching Speed
- ESD Protected
Applications
- Battery-operated systems
- Solid-state relays
- Drivers for relays, solenoids, lamps, hammers, displays, memories, and transistors
- Power-supply converter circuits
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging details. The standard part number utilizes a tape and reel carrier format. Ensure compliance with RoHS directives and confirm that the selected variant meets the required environmental standards for the intended deployment environment before finalizing procurement.
Selection Notes
Select this component when space-constrained designs require both N-channel and P-channel switching capabilities in a single footprint. Evaluate the thermal resistance characteristics and ensure the application's duty cycle remains within the safe operation area limits defined in the datasheet. Confirm that the gate drive voltage aligns with the specified threshold requirements for optimal conduction performance.
Part Context
This component belongs to the DMG1016 series of complementary MOSFETs designed for high-efficiency power management. It serves as a compact solution for applications requiring dual-polarity switching without occupying multiple board locations. The SOT363 package provides a miniature form factor suitable for dense circuit layouts.
Replacement Considerations
An automotive-compliant version exists under the separate part number DMG1016UDWQ. Verify if the specific reliability standards required for the target application necessitate this alternative variant over the standard commercial grade device.
