DMG1016UDWQ-7

$0.33

Description：MOSFET N/P-CH 20V 1.066A SOT363
Series：-

SKU:01cc3168a961 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 20V 1.066A SOT363
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel Complementary
FET Feature：-
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：1.066A (Ta), 845mA (Ta)
Rds On (Max) @ Id, Vgs：450mOhm @ 600mA, 4.5V, 750mOhm @ 430mA, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：736.6nC @ 4.5V, 0.62nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：60.67pF @ 10V, 59.76pF @ 16V
Power - Max：330mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-TSSOP, SC-88, SOT-363
Supplier Device Package：SOT-363
Grade：Automotive
Qualification：AEC-Q101

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DMG1016UDWQ-7

Overview

The DMG1016UDWQ-7 is a complementary pair enhancement mode MOSFET in an SOT363 package. It integrates an N-channel device (Q1) and a P-channel device (Q2). Q1 supports a drain-source voltage of 20V, continuous current of 1066mA at 25°C, and on-resistance of 0.45Ω at VGS=4.5V. Q2 supports -20V, -845mA, and 0.75Ω at VGS=-4.5V. Total power dissipation is 330mW with a junction temperature range of -55°C to +150°C.

Feature Summary

Complementary N/P-channel configuration for efficient switching
Low on-resistance optimized for high efficiency power management
Fast switching speed with low input capacitance
ESD protected and fully RoHS compliant

Applications

Battery operated systems
Solid-state relays
Drivers for relays, solenoids, lamps, hammers, displays, memories, and transistors
Power supply converter circuits

Procurement Notes

Verify the component against the official Diodes Incorporated datasheet DS44628 Rev. 1-3. Confirm the part number suffix matches the specific automotive qualification requirements if applicable. Ensure the ordering information aligns with the specified tape and reel packaging quantity of 3000 units per carrier.

Selection Notes

Select this component for applications requiring a compact complementary MOSFET pair. The SOT363 package suits space-constrained designs. Verify that the 20V rating and current capabilities meet the circuit load requirements. Consider the thermal resistance characteristics for heat dissipation in the intended operating environment.

Part Context

This component belongs to the DMG1016UDWQ series of complementary enhancement mode MOSFETs manufactured by Diodes Incorporated. It is designed to minimize on-state resistance while maintaining superior switching performance. The device is suitable for automotive applications requiring specific change control and is AEC-Q101 qualified.