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Product Detailed Parameters
- Description：MOSFET N/P-CH 20V 0.87A SOT563
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：870mA, 640mA
- Rds On (Max) @ Id, Vgs：400mOhm @ 600mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.74nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：60.67pF @ 16V
- Power - Max：530mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-563
- Grade：-
- Qualification：-
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Overview
The DMG1016VQ-13 is a dual complementary enhancement mode MOSFET array manufactured by Diodes Incorporated. It integrates an N-channel and a P-channel transistor within a single SOT-563 surface-mount package. The device supports a drain-source voltage (Vdss) of 20 V. Continuous drain current ratings are specified at 870 mA for the N-channel and 640 mA for the P-channel at 25°C. Maximum on-resistance values are 400 mΩ for the N-channel and 700 mΩ for the P-channel. The component operates with a gate-source voltage range of -6 V to +6 V and features a maximum power dissipation of 530 mW.
Feature Summary
- Integrates N-channel and P-channel enhancement mode MOSFETs into a compact dual configuration.
- Utilizes logic-level gate drive characteristics for compatibility with standard digital interfaces.
- Provides thermal efficiency through a small outline surface-mount footprint.
Applications
- DC-DC converter input/output switching stages
- Load switch circuits in portable electronic devices
- Battery protection and management systems
Procurement Notes
Verify the specific suffix 'Q-13' against the manufacturer's official datasheet to confirm it denotes the tape and reel packaging format. Ensure that the electrical parameters match the design requirements, as variations may exist between different suffix codes within the same base part number family. Cross-reference the RoHS compliance status directly from the source documentation before finalizing procurement.
Selection Notes
Select this component when space-constrained designs require both N-type and P-type switching capabilities in a single package. The 20 V rating suits low-voltage applications such as USB-powered devices or battery-operated equipment. Compare the 400 mΩ and 700 mΩ on-resistances against system loss budgets to ensure adequate performance under expected load currents.
Part Context
This part belongs to the DMG1016 series of complementary MOSFET arrays produced by Diodes Incorporated. The series offers various package options including SOT-563 and SOT-363 to accommodate different board space and thermal requirements. The DMG1016VQ-13 specifically utilizes the SOT-563 form factor, providing a higher pin count configuration compared to smaller packages while maintaining a small footprint.
Replacement Considerations
The DMG1016V-7 is identified as a parametric equivalent. Verify pinout compatibility and exact electrical tolerances before substitution. Other members of the DMG1016 family may offer different package styles but should be evaluated for functional equivalence.
