DMG1016VQ-7

Overview

The DMG1016VQ-7 is a complementary pair enhancement mode MOSFET manufactured by Diodes Incorporated in an SOT563 surface mount package. It integrates an N-channel device (Q1) and a P-channel device (Q2). The N-channel transistor supports a drain-source voltage of 20V with a maximum continuous drain current of 870mA at +25°C, while the P-channel counterpart handles -20V and -640mA. On-resistance for the N-channel ranges from 0.3Ω to 0.7Ω depending on gate drive, and the P-channel ranges from 0.5Ω to 1.3Ω. Power dissipation is rated at 530mW, with an operating temperature range of -55°C to +150°C.

Feature Summary

• Complementary N-channel and P-channel enhancement mode MOSFETs integrated into a single ultra-small surface mount package.
• Optimized for high-efficiency power management applications through minimized on-state resistance and superior switching performance.
• Features low gate threshold voltage, low input capacitance, fast switching speed, and low leakage currents.
• Includes ESD protected gates and is fully RoHS compliant, halogen-free, and antimony-free.

Applications

• High-efficiency power management circuits
• Automotive applications requiring specific change control
• General purpose switches

Procurement Notes

Verify component authenticity against official Diodes Incorporated documentation before integration. Confirm that the AEC-Q101 qualification and IATF 16949 manufacturing status align with specific automotive supply chain requirements. Ensure design compliance with the stated thermal characteristics and maximum ratings to prevent device failure under load.

Selection Notes

Select this component when space-constrained designs require a matched N-P channel pair in an SOT563 footprint. Evaluate the specific RDS(ON) values at your intended gate drive voltages (1.8V, 2.5V, or 4.5V) to ensure adequate current handling. Consider the 530mW power dissipation limit and thermal resistance when designing PCB copper areas for heat removal.

Part Context

This part belongs to the DMG1016 series of complementary MOSFETs from Diodes Incorporated. It is designed as a compact solution for replacing discrete N and P-channel transistors in portable and automotive electronics. The Q-suffix indicates AEC-Q101 qualification for automotive use.

Replacement Considerations

Direct replacements include other Diodes Incorporated complementary pairs in SOT563 packages such as the DMG1016UDW-7, though pinout and electrical parameters must be verified against the specific datasheet requirements of the target circuit.

FAQ

Is the DMG1016VQ-7 qualified for automotive applications?

Yes, the DMG1016VQ is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities, making it suitable for automotive applications requiring specific change control.

What is the maximum continuous drain current for the N-channel device?

The maximum continuous drain current for the N-channel device (Q1) is 870mA at an ambient temperature of +25°C, decreasing to 630mA at +85°C.

How does the gate threshold voltage affect operation?

The gate threshold voltage is less than 1V, allowing the device to turn on effectively at lower logic levels. This facilitates compatibility with various control signals while maintaining low on-resistance across different gate drive conditions.