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Product Detailed Parameters
- Description：MOSFET 2P-CH 20V 1.03A SOT563
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：1.03A
- Rds On (Max) @ Id, Vgs：750mOhm @ 430mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.62nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：59.76pF @ 16V
- Power - Max：530mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-563
- Grade：-
- Qualification：-
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Overview
The DMG1023UV-7 is a dual P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (VDSS) of -20 V and a continuous drain current (ID) of -1.03 A at 25°C. The device exhibits a low static drain-source on-resistance (RDS(ON)) of 0.75 Ω at VGS = -4.5 V and ID = -430 mA. Total gate charge (Qg) is typically 622.4 pC, with turn-on rise time of 8.1 ns and turn-off fall time of 20.7 ns. Power dissipation is rated at 530 mW, and the junction temperature range spans from -55°C to +150°C.
Feature Summary
- Dual P-channel configuration in an ultra-small SOT563 surface mount package
- Low on-resistance and low gate threshold voltage for efficient switching
- Fast switching speed with low input capacitance and leakage currents
- ESD protection up to 3kV and compliance with AEC-Q101 automotive standards
Applications
- Battery management systems
- Power switches in portable devices
- Load switching applications
Procurement Notes
Verify the component authenticity through official Diodes Incorporated channels or authorized distributors. Confirm that the part number matches the specific suffix '-7' indicating tape and reel packaging quantity of 3,000 units. Ensure the received components meet the RoHS and halogen-free specifications outlined in the datasheet.
Selection Notes
Select this component when a compact dual P-channel solution is required for low-voltage switching applications. Consider the -20 V rating and 530 mW power dissipation limits for thermal management. The SOT563 package is suitable for space-constrained designs requiring high reliability and fast switching performance.
Part Context
The DMG1023UV belongs to the DMG1023 series of dual P-channel MOSFETs from Diodes Incorporated. This series is designed for general-purpose switching applications where small footprint and high efficiency are critical. The UV variant specifically denotes the SOT563 package type.
Replacement Considerations
Direct replacements include other dual P-channel MOSFETs in SOT563 packages with similar VDSS and RDS(ON) characteristics. Verify pinout compatibility and electrical parameters before substitution.
FAQ
What is the maximum gate-source voltage for the DMG1023UV?
The maximum gate-source voltage (VGSS) is ±6 V.
Is the DMG1023UV qualified for automotive applications?
Yes, the device is qualified to AEC-Q101 standards for high reliability.
What is the typical total gate charge (Qg) at VGS = -4.5 V?
The typical total gate charge is 622.4 pC.
