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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 1.38A SOT563
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：1.38A
- Rds On (Max) @ Id, Vgs：450mOhm @ 600mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.74nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：60.67pF @ 16V
- Power - Max：530mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-563
- Grade：-
- Qualification：-
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Overview
The DMG1024UV-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (VDSS) of 20 V and a continuous drain current (ID) of 1.38 A at 25°C. The device exhibits low on-resistance, with RDS(on) typically ranging from 0.3 Ω to 0.75 Ω depending on gate drive conditions. Key electrical parameters include an input capacitance (Ciss) of 60.67 pF, a gate threshold voltage (VGS(th)) between 0.5 V and 1.0 V, and a power dissipation capability of 530 mW. It operates within a temperature range of -55°C to +150°C.
Feature Summary
- Dual N-channel configuration in an ultra-small surface mount package
- Low on-resistance for efficient power switching
- Fast switching speed with low input/output leakage
- ESD protection rated up to 2kV
Applications
- Battery management systems
- Power switches in portable devices
- Load control circuits
Procurement Notes
Verify the component authenticity against the official Diodes Incorporated datasheet DS31974 Rev. 5-2. Confirm that the ordering suffix '-7' corresponds to the standard 3000-unit tape and reel packaging format specified in the manufacturer's documentation. Ensure compliance with RoHS standards and AEC-Q101 qualification requirements as stated in the product specifications.
Selection Notes
Select this component when a compact dual N-channel solution is required for low-voltage applications. The SOT-563 package provides space efficiency while maintaining adequate thermal performance for moderate current loads. Consider the specific RDS(on) values under intended gate drive voltages to ensure optimal efficiency in the target circuit design.
Part Context
This part belongs to the DMG1024UV series of dual N-channel enhancement mode MOSFETs. It is designed for high-reliability applications requiring small form factors. The device integrates two independent N-channel MOSFETs within a single SOT-563 package, offering a consolidated solution for dual-switching functions in space-constrained electronic designs.
Replacement Considerations
Direct replacements must match the SOT-563-6 package, 20V VDSS rating, and dual N-channel configuration. Verify pinout compatibility and thermal resistance characteristics before substitution.
