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DMG2301U-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET P-CH 20V 2.5A SOT23-3. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for DMG2301U-7
- Description：MOSFET P-CH 20V 2.5A SOT23-3
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：2.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
- Rds On (Max) @ Id, Vgs：130mOhm @ 2.8A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：6.5 nC @ 4.5 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：608 pF @ 6 V
- FET Feature：-
- Power Dissipation (Max)：800mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
Single FETs, MOSFETs datasheet and documents for DMG2301U-7
Single FETs, MOSFETs Overview
The DMG2301U-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (BVDSS) of -20 V and a maximum continuous drain current (ID) of -2.7 A at +25°C. The device exhibits a low on-state resistance (RDS(ON)) of 80 mΩ at VGS = -4.5V and 110 mΩ at VGS = -2.5V. It operates within a temperature range of -55°C to +150°C, with a power dissipation rating of 0.8 W in an SOT-23 package.
Single FETs, MOSFETs Feature Summary
- Low on-state resistance for high-efficiency power management
- Fast switching speed with low input capacitance
- Qualified to AEC-Q101 standards for automotive reliability
- Totally lead-free and fully RoHS compliant
Single FETs, MOSFETs Applications
- Backlighting
- Power Management Functions
- DC-DC Converters
- Motor Control
Single FETs, MOSFETs Procurement Notes
Verify the component revision against the official datasheet DS31848 Rev. 6-3. Confirm that the SOT-23 package matches the required footprint. Ensure compliance with RoHS and AEC-Q101 standards if applicable to the target environment. Check for any specific marking codes or date code requirements relevant to the production timeline.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring a compact P-channel switch with low on-resistance. Consider the -20V breakdown voltage and -2.7A current capability for suitable load matching. Evaluate thermal performance based on the 0.8W power dissipation limit and 157 °C/W thermal resistance. Verify gate drive voltage compatibility with the specified RDS(ON) thresholds.
Single FETs, MOSFETs Part Context
This part belongs to the DMG2301 series of P-channel MOSFETs from Diodes Incorporated. It is designed as a surface-mount solution for space-constrained designs. The device utilizes silicon technology and is housed in a standard SOT-23 case. It serves as a general-purpose switch for low-voltage DC circuits.
Single FETs, MOSFETs Replacement Considerations
The datasheet explicitly states that the DMG2301U-7 is not recommended for new design and recommends using the DMG2301L as a replacement. Verify pinout and electrical specifications between the U and L variants before substitution.
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