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DMG2302U-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 20V 4.2A SOT23-3. Review the specifications below when checking this part for your BOM.
The DMG2302U-7 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 20 V and a continuous drain current of 4.2 A at +25°C. The device operates within a junction temperature range of -55°C to +150°C. Key electrical parameters include a gate threshold voltage of up to 1.0 V, a static drain-source on-resistance of 90 mΩ at VGS=4.5V, and a total gate charge of 7.0 nC. It is housed in a surface-mount SOT-23 package.
Verify the component status before procurement as the datasheet explicitly marks this part as not recommended for new designs. Confirm that the specific ordering suffix matches the required packaging format. Ensure design constraints align with the provided thermal resistance values under standard FR-4 PCB mounting conditions.
Select this component for low-voltage switching tasks where automotive qualification is beneficial. Evaluate the thermal performance against the specified junction-to-ambient resistance. Consider the replacement recommendation if designing new hardware, as the manufacturer suggests using alternative parts for future implementations.
This component belongs to the DMG2302 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes silicon technology and is packaged in a standard SOT-23 form factor. The product line is designed for general-purpose switching applications with a focus on low on-resistance and efficient switching performance.
The datasheet explicitly recommends using the DMN2056U as a replacement for this part number.
No, the datasheet explicitly states that this part is not recommended for new designs.
The maximum continuous drain current is 4.2 A at an ambient temperature of +25°C.
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