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DMG2302UKQ-13 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 20V 2.8A SOT23 T&R 1. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for DMG2302UKQ-13
- Description：MOSFET N-CH 20V 2.8A SOT23 T&R 1
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：2.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
- Rds On (Max) @ Id, Vgs：90mOhm @ 3.6A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：2.8 nC @ 10 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：130 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：660mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
Single FETs, MOSFETs datasheet and documents for DMG2302UKQ-13
Single FETs, MOSFETs Overview
The DMG2302UKQ-13 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (BVDSS) of 20V and a continuous drain current (ID) of 2.8A at +25°C. The device offers a maximum on-resistance (RDS(ON)) of 90mΩ at VGS=4.5V and 120mΩ at VGS=2.5V. It operates within a temperature range of -55°C to +150°C, dissipates up to 1.1W on high-coverage PCBs, and utilizes a SOT-23 package.
Single FETs, MOSFETs Feature Summary
- Qualified to AEC-Q101 standards for automotive reliability
- Low on-resistance and low input capacitance design
- Fast switching speed with ESD protected gate
- Totally lead-free and fully RoHS compliant
Single FETs, MOSFETs Applications
- Backlighting
- Power Management Functions
- DC-DC Converters
- Motor Control
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration as defined in the manufacturer's documentation. Confirm that the component meets all required automotive quality standards, including PPAP capability, before finalizing procurement specifications for production integration.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring robust automotive-grade performance in compact surface-mount designs. Evaluate thermal management requirements based on the specified power dissipation limits under varying PCB copper coverage conditions. Ensure gate drive voltages align with the threshold characteristics for optimal switching efficiency.
Single FETs, MOSFETs Part Context
This part belongs to the DMG2302 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. The series is engineered to meet stringent automotive application requirements while maintaining small form factor constraints through its SOT-23 packaging solution.
Single FETs, MOSFETs Replacement Considerations
Consult official substitution guides for verified alternatives such as the DMG2302UKQ-7 variant, which shares identical electrical characteristics but differs in packaging quantity.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
