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DMG2302UQ-13 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 20V 4.2A SOT23-3. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for DMG2302UQ-13
- Description：MOSFET N-CH 20V 4.2A SOT23-3
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：4.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
- Rds On (Max) @ Id, Vgs：90mOhm @ 3.6A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs：7 nC @ 4.5 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：594.3 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：800mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
Single FETs, MOSFETs datasheet and documents for DMG2302UQ-13
Single FETs, MOSFETs Overview
The DMG2302UQ-13 is a surface-mount N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (Vdss) of 20 V and a continuous drain current (Id) of 4.2 A at +25°C ambient temperature. The device exhibits a maximum on-resistance (Rds(on)) of 90 mΩ at Vgs = 4.5 V and 120 mΩ at Vgs = 2.5 V. It operates within a junction temperature range of -55°C to +150°C, with a maximum power dissipation of 800 mW at +25°C. The component is housed in an SOT-23 package.
Single FETs, MOSFETs Feature Summary
- Designed for high-efficiency power management applications through minimized on-state resistance while maintaining superior switching performance.
- Qualified for automotive applications requiring specific change control, meeting AEC-Q101 standards and PPAP capability.
- Manufactured in IATF 16949 certified facilities using totally lead-free, fully RoHS compliant, halogen-free, and antimony-free materials.
Single FETs, MOSFETs Applications
- General purpose interfacing switches
- Power management functions
- Boost applications
- Analog switches
Single FETs, MOSFETs Procurement Notes
Verify the ordering suffix '-13' corresponds to the 10,000-unit tape and reel carrier quantity as specified in the manufacturer's documentation. Confirm that the component meets the required automotive quality standards, including AEC-Q101 qualification and PPAP capability, if intended for such environments. Ensure the design accounts for the thermal characteristics and power dissipation limits defined in the datasheet.
Single FETs, MOSFETs Selection Notes
Select this component when a low on-resistance N-channel MOSFET is required for compact surface-mount designs. The 20 V rating and 4.2 A continuous current capability suit general-purpose switching tasks. Consider the SOT-23 package constraints regarding thermal dissipation and ensure the gate drive voltage aligns with the specified Rds(on) test conditions for optimal efficiency.
Single FETs, MOSFETs Part Context
This part belongs to the DMG2302UQ series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is designed to minimize on-state resistance while maintaining fast switching speeds. The product is marked as not recommended for new design, with the datasheet suggesting the use of the DMN2055UQ as an alternative for future projects.
Single FETs, MOSFETs Replacement Considerations
The datasheet explicitly recommends using the DMN2055UQ instead of this part for new designs.
Single FETs, MOSFETs FAQ
Is the DMG2302UQ-13 suitable for automotive applications?
Yes, the DMG2302UQ is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities, making it suitable for automotive applications requiring specific change control.
What is the maximum pulsed drain current for this device?
The maximum pulsed drain current (IDM) for the DMG2302UQ is 27 A, subject to repetitive rating limitations and pulse width restrictions based on junction temperature.
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