DMG2302UQ-7

$0.42

Description：MOSFET N-CH 20V 4.2A SOT23-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:9867fd712bfb Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

DMG2302UQ-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 20V 4.2A SOT23-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMG2302UQ-7

Description：MOSFET N-CH 20V 4.2A SOT23-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：4.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
Rds On (Max) @ Id, Vgs：90mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id：1V @ 50µA
Gate Charge (Qg) (Max) @ Vgs：7 nC @ 4.5 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：594.3 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：800mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

Single FETs, MOSFETs datasheet and documents for DMG2302UQ-7

DMG2302UQ-7

Single FETs, MOSFETs Overview

The DMG2302UQ-7 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (Vdss) of 20 V and a gate-source voltage (Vgss) rating of ±8 V. The device supports a continuous drain current of 4.2 A at +25°C and a pulsed drain current of 27 A. Maximum on-resistance (Rds(on)) is specified as 90 mΩ at Vgs = 4.5 V and 120 mΩ at Vgs = 2.5 V. It utilizes a SOT-23 package, operates within a junction temperature range of -55°C to +150°C, and holds AEC-Q101 qualification.

Single FETs, MOSFETs Feature Summary

Designed for high-efficiency power management applications with minimized on-state resistance.
Suitable for automotive applications requiring specific change control; AEC-Q101 qualified and PPAP capable.
Totally lead-free and fully RoHS compliant, halogen and antimony free.
Features low input capacitance and fast switching speed.

Single FETs, MOSFETs Applications

General purpose interfacing switches
Power management functions
Boost applications
Analog switches

Single FETs, MOSFETs Procurement Notes

Verify the component against the official datasheet DS38036 Rev. 2-3 to confirm specifications. Ensure the selected variant matches the required packaging quantity and carrier type. Confirm that the application environment complies with the specified operating temperature ranges and electrical ratings provided in the manufacturer's documentation.

Single FETs, MOSFETs Selection Notes

Select this component based on its 20 V drain-source voltage capability and low on-resistance characteristics suitable for efficient switching. Consider the thermal performance and package constraints when designing for high-current applications. Verify compatibility with the intended gate drive voltages to ensure optimal Rds(on) performance.

Single FETs, MOSFETs Part Context

This part belongs to the DMG2302UQ series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is designed to provide superior switching performance while maintaining low on-state resistance. The product is manufactured in IATF 16949 certified facilities and is intended for use in demanding environments including automotive electronics.

Single FETs, MOSFETs Replacement Considerations

The datasheet explicitly states that the DMG2302UQ is not recommended for new designs and advises using the DMN2055UQ as a replacement.

Single FETs, MOSFETs FAQ

Is the DMG2302UQ-7 suitable for automotive applications?

Yes, the DMG2302UQ is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities, making it suitable for automotive applications requiring specific change control.