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DMG302PU-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET P-CH 25V 170MA SOT23-3. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for DMG302PU-7
- Description：MOSFET P-CH 25V 170MA SOT23-3
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：25 V
- Current - Continuous Drain (Id) @ 25°C：170mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.7V, 4.5V
- Rds On (Max) @ Id, Vgs：10Ohm @ 200mA, 4.5V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.35 nC @ 4.5 V
- Vgs (Max)：-8V
- Input Capacitance (Ciss) (Max) @ Vds：27.2 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：330mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
Single FETs, MOSFETs datasheet and documents for DMG302PU-7
Single FETs, MOSFETs Overview
The DMG302PU-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -25V drain-source breakdown voltage and a continuous drain current of -0.17A at +25°C. The device exhibits a low on-state resistance of 10Ω at VGS = -4.5V and 13Ω at VGS = -2.7V. Total gate charge is typically 0.35nC, with an input capacitance of 27.2pF. It operates within a junction temperature range of -55°C to +150°C and is housed in a surface-mount SOT-23 package.
Single FETs, MOSFETs Feature Summary
- Low on-resistance for high efficiency power management
- Fast switching speed with low input capacitance
- ESD protected gate exceeding 6kV human body model rating
- Qualified to AEC-Q101 standards for automotive reliability
Single FETs, MOSFETs Applications
- DC-DC converters
- Power management functions
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging quantity and compliance status. Confirm that the component meets required environmental directives such as RoHS and lead-free specifications before procurement. Ensure the selected variant matches the intended thermal and electrical requirements for the target application environment.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring small surface-mount packages with robust ESD protection. Evaluate the on-resistance characteristics at the specific gate drive voltage used in the circuit design. Consider the thermal resistance values when designing heat dissipation strategies for the PCB layout to ensure reliable operation under steady-state conditions.
Single FETs, MOSFETs Part Context
This part belongs to the DMG302PU series of P-channel MOSFETs from Diodes Incorporated. It is designed to minimize on-state resistance while maintaining superior switching performance. The series utilizes silicon technology and is available in standard SOT-23 cases suitable for automated surface-mount assembly processes.
Single FETs, MOSFETs Replacement Considerations
Check datasheets for alternative P-channel MOSFETs with compatible -25V ratings and similar SOT-23 footprints. Verify pinout compatibility and ensure replacement devices meet or exceed the original gate threshold voltage and on-resistance specifications.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
