Single FETs, MOSFETs DMG3401LSNQ-13 product image

DMG3401LSNQ-13

$0.14
  • Description:MOSFET P-CH 30V 3A SC59-3
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)

SKU:a6f69e6f2159 Category: Brand:

  
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DMG3401LSNQ-13 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET P-CH 30V 3A SC59-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMG3401LSNQ-13

  • Description:MOSFET P-CH 30V 3A SC59-3
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):2.5V, 10V
  • Rds On (Max) @ Id, Vgs:50mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id:1.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:25.1 nC @ 10 V
  • Vgs (Max):±12V
  • Input Capacitance (Ciss) (Max) @ Vds:1326 pF @ 15 V
  • FET Feature:-
  • Power Dissipation (Max):800mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Supplier Device Package:SC-59-3
  • Package / Case:TO-236-3, SC-59, SOT-23-3

Single FETs, MOSFETs datasheet and documents for DMG3401LSNQ-13

DMG3401LSNQ-13

Single FETs, MOSFETs Overview

The DMG3401LSNQ-13 is a P-channel enhancement-mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage of -30V and low on-resistance values of 50mΩ at VGS = -10V, 60mΩ at VGS = -4.5V, and 85mΩ at VGS = -2.5V. The device supports continuous drain currents up to -3.7A at +25°C and operates within a junction temperature range of -55°C to +150°C. Packaged in an SC59 outline, it is AEC-Q101 qualified for automotive applications.

Single FETs, MOSFETs Feature Summary

  • Low input capacitance and fast switching performance
  • Low on-resistance across various gate voltages
  • Low input and output leakage characteristics
  • Qualified for automotive applications with PPAP capability

Single FETs, MOSFETs Applications

  • Motor control systems
  • Backlighting circuits
  • DC-DC converters
  • Power management functions

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration. Confirm that the component meets all required RoHS and halogen-free standards for your manufacturing process. Ensure compatibility with IATF16949 certified facility requirements if used in automotive supply chains.

Single FETs, MOSFETs Selection Notes

Select this component for high-efficiency power management designs requiring small-signal P-channel switching. Evaluate thermal resistance parameters against your PCB copper pad layout to ensure adequate heat dissipation. Consider the gate threshold voltage specifications when designing drive circuits for optimal switching efficiency.

Single FETs, MOSFETs Part Context

This part belongs to Diodes Incorporated's new-generation small-signal enhancement-mode MOSFET family. It is designed to minimize on-resistance while maintaining rapid switching capabilities. The product line targets applications demanding high efficiency and compact form factors in modern electronic systems.

Single FETs, MOSFETs Replacement Considerations

Cross-reference with other -30V P-channel MOSFETs in the SC59 package. Verify pinout compatibility and electrical parameter overlaps before substitution.

Single FETs, MOSFETs FAQ

Is the DMG3401LSNQ-13 suitable for automotive use?

Yes, the DMG3401LSNQ is AEC-Q101 qualified, PPAP capable, and manufactured in IATF16949 certified facilities.

What is the maximum pulsed drain current?

The maximum pulsed drain current is -30A with a 10µs pulse duration and 1% duty cycle.

DMG3401LSNQ-13DMG3401LSNQ-13
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