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DMG3401LSNQ-13 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET P-CH 30V 3A SC59-3. Review the specifications below when checking this part for your BOM.
The DMG3401LSNQ-13 is a P-channel enhancement-mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage of -30V and low on-resistance values of 50mΩ at VGS = -10V, 60mΩ at VGS = -4.5V, and 85mΩ at VGS = -2.5V. The device supports continuous drain currents up to -3.7A at +25°C and operates within a junction temperature range of -55°C to +150°C. Packaged in an SC59 outline, it is AEC-Q101 qualified for automotive applications.
Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration. Confirm that the component meets all required RoHS and halogen-free standards for your manufacturing process. Ensure compatibility with IATF16949 certified facility requirements if used in automotive supply chains.
Select this component for high-efficiency power management designs requiring small-signal P-channel switching. Evaluate thermal resistance parameters against your PCB copper pad layout to ensure adequate heat dissipation. Consider the gate threshold voltage specifications when designing drive circuits for optimal switching efficiency.
This part belongs to Diodes Incorporated's new-generation small-signal enhancement-mode MOSFET family. It is designed to minimize on-resistance while maintaining rapid switching capabilities. The product line targets applications demanding high efficiency and compact form factors in modern electronic systems.
Cross-reference with other -30V P-channel MOSFETs in the SC59 package. Verify pinout compatibility and electrical parameter overlaps before substitution.
Yes, the DMG3401LSNQ is AEC-Q101 qualified, PPAP capable, and manufactured in IATF16949 certified facilities.
The maximum pulsed drain current is -30A with a 10µs pulse duration and 1% duty cycle.
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