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DMG3404L-13 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 30V 4.2A SOT23. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for DMG3404L-13
- Description：MOSFET N-CH 30V 4.2A SOT23
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：4.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：25mOhm @ 5.8A, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：13.2 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：641 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：780mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
Single FETs, MOSFETs datasheet and documents for DMG3404L-13
Single FETs, MOSFETs Overview
The DMG3404L-13 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (V_DSS) of 30V and a continuous drain current (I_D) of 5.8A at +25°C. The device offers a maximum on-resistance (R_DS(ON)) of 25mΩ at V_GS = 10V and 35mΩ at V_GS = 4.5V. Key electrical parameters include a gate threshold voltage (V_GS(TH)) ranging from 1.0V to 2.0V, total gate charge (Q_g) of 13.2nC, and input capacitance (C_iss) of 641pF. It operates within a temperature range of -55°C to +150°C.
Single FETs, MOSFETs Feature Summary
- Designed for high efficiency power management applications with minimized on-state resistance.
- Maintains superior switching performance alongside low input/output leakage characteristics.
- Compliant with RoHS standards and free from halogen and antimony.
Single FETs, MOSFETs Applications
- Battery Charging
- Power Management Functions
- DC-DC Converters
- Portable Power Adaptors
Single FETs, MOSFETs Procurement Notes
Verify the ordering suffix '-13' corresponds to the 10000-unit tape and reel packaging configuration as specified in the manufacturer's documentation. Confirm that the component meets the required environmental compliance standards, specifically RoHS 2 and REACH regulations, before finalizing procurement specifications.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring a 30V N-channel MOSFET in a compact SOT23 package. Ensure the application gate drive voltage supports the specified R_DS(ON) thresholds at 10V or 4.5V. Evaluate thermal dissipation requirements against the junction-to-ambient thermal resistance values provided for different PCB mounting conditions.
Single FETs, MOSFETs Part Context
This part belongs to the DMG3404L series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. It utilizes silicon technology and is housed in a standard SOT23 surface-mount case. The product line is engineered to balance low conduction losses with fast switching speeds for portable electronics.
Single FETs, MOSFETs Replacement Considerations
Cross-reference with other Diodes Incorporated parts such as the DMG3404L-7, which shares identical electrical characteristics but differs in packaging quantity (3000 units per reel). Verify pinout compatibility and thermal performance metrics when substituting.
Single FETs, MOSFETs FAQ
What is the maximum pulsed drain current for the DMG3404L-13?
The maximum pulsed drain current is 30A, measured with a pulse width of 10µs or less and a duty cycle of 1% or less.
How does the on-resistance vary with temperature?
The on-resistance increases as the junction temperature rises. Graphical data in the datasheet illustrates the normalized on-resistance variation across the operating temperature range from -55°C to +150°C.
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