DMG3406L-7

$0.31

Description：MOSFET N-CH 30V 3.6A SOT23
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:7d03da1eed5f Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

DMG3406L-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 30V 3.6A SOT23. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMG3406L-7

Description：MOSFET N-CH 30V 3.6A SOT23
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：3.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：50mOhm @ 3.6A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：11.2 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：495 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：770mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

Single FETs, MOSFETs datasheet and documents for DMG3406L-7

DMG3406L-7

Single FETs, MOSFETs Overview

The DMG3406L-7 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage of 30V and a continuous drain current of 3.6A at 25°C. The device offers a maximum on-resistance of 50mΩ at VGS=10V and 70mΩ at VGS=4.5V. It operates within a temperature range of -55°C to +150°C, with a power dissipation of 0.77W in standard conditions. The component utilizes a SOT-23 package.

Single FETs, MOSFETs Feature Summary

Designed for high efficiency power management applications
Minimizes on-state resistance while maintaining superior switching performance
Totally lead-free and fully RoHS compliant
Halogen and antimony free green device

Single FETs, MOSFETs Applications

Battery Charging
Power Management Functions
DC-DC Converters
Portable Power Adaptors

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 3000 units per tape and reel packaging configuration as documented in the manufacturer's ordering information. Confirm that the component meets all applicable environmental compliance standards required for the intended assembly process before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when a low on-resistance N-channel MOSFET is required for portable power adaptors or DC-DC converters. Ensure the gate drive voltage supports the specified RDS(ON) characteristics at either 4.5V or 10V. Verify thermal management requirements align with the junction-to-ambient thermal resistance specifications provided in the datasheet.

Single FETs, MOSFETs Part Context

This part belongs to the DMG3406 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is designed specifically for minimizing on-state resistance while maintaining fast switching speeds. The product is housed in a compact SOT-23 case suitable for surface mount technology applications requiring efficient power management solutions.

Single FETs, MOSFETs Replacement Considerations

The DMG3406L-13 is a confirmed substitute offering identical electrical characteristics but packaged in quantities of 10,000 units per tape and reel instead of 3,000 units.