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DMG3407SSN-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET P-CH 30V 4A SC59. Review the specifications below when checking this part for your BOM.
The DMG3407SSN-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of -30V and a continuous drain current of -4.0A at +25°C with VGS = -10V. The static drain-source on-resistance is specified as 50mΩ max at VGS = -10V and 72mΩ max at VGS = -4.5V. The device utilizes an SC59 (SOT-23) surface-mount package.
Verify the specific ordering suffix '-7' corresponds to the 3000-unit tape and reel packaging configuration. Confirm that the SC59 case material meets UL flammability classification rating 94V-0 requirements for your assembly process. Ensure moisture sensitivity level 1 per J-STD-020 is compatible with your reflow soldering profile.
Select this component when a P-channel MOSFET with low on-resistance and fast switching speed is required. Consider the -30V breakdown voltage and -4.0A continuous current limits for steady-state operation. Evaluate thermal resistance characteristics based on the specific PCB copper coverage and ambient temperature conditions.
This part belongs to the DMG3407 series of P-channel enhancement mode MOSFETs from Diodes Incorporated. It is designed for efficient power management solutions requiring low conduction losses. The device is housed in a compact SC59 surface-mount package suitable for space-constrained designs.
Consult official manufacturer documentation for verified substitute part numbers. Do not assume cross-compatibility with other P-channel MOSFETs without verifying pinout, voltage ratings, and thermal specifications against the original datasheet.
The maximum gate-source voltage (VGSS) rating is ±20V.
Yes, the device is qualified to AEC-Q101 standards for high reliability.
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