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DMG3418L-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 30V 4A SOT23. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for DMG3418L-7
- Description：MOSFET N-CH 30V 4A SOT23
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 10V
- Rds On (Max) @ Id, Vgs：60mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：5.5 nC @ 4.5 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：464.3 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：1.4W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
Single FETs, MOSFETs datasheet and documents for DMG3418L-7
Single FETs, MOSFETs Overview
The DMG3418L-7 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 30V and a continuous drain current (ID) of 4A at +25°C. The device offers a low on-state resistance (RDS(ON)) of 60mΩ at VGS=10V and 70mΩ at VGS=4.5V. Packaged in a standard SOT-23 case, it supports a total power dissipation of 1.4W at +25°C and operates within a junction temperature range of -55°C to +150°C.
Single FETs, MOSFETs Feature Summary
- Low on-state resistance for high efficiency
- Fast switching speed with low input capacitance
- Totally lead-free and fully RoHS compliant
- Halogen and antimony free green device
Single FETs, MOSFETs Applications
- Backlighting
- Power Management Functions
- DC-DC Converters
- Motor Control
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging quantity and type. The DMG3418L-7 designation corresponds to the standard SOT-23 case packaged in tape and reel format. Confirm compliance requirements such as AEC-Q101 qualification if intended for automotive applications requiring specific change control protocols.
Single FETs, MOSFETs Selection Notes
Select this component based on its 30V breakdown voltage and 4A continuous current rating suitable for compact surface-mount designs. Evaluate the RDS(ON) specifications at relevant gate drive voltages to ensure adequate conduction losses. Consider the thermal resistance and power dissipation limits relative to the expected operating ambient temperature and PCB copper area.
Single FETs, MOSFETs Part Context
This part belongs to the DMG3418L series of N-channel enhancement mode MOSFETs from Diodes Incorporated. These devices are engineered to minimize on-state resistance while maintaining superior switching performance. The series targets high-efficiency power management applications requiring small form factor solutions.
Single FETs, MOSFETs Replacement Considerations
Consult official manufacturer substitution lists for verified equivalents. Ensure any replacement matches the SOT-23 package, 30V BVDSS, and comparable RDS(ON) characteristics.
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