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DMG3N60SCT is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 600V 3.3A TO220AB. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for DMG3N60SCT
- Description：MOSFET N-CH 600V 3.3A TO220AB
- Series：-
- Mfr：Diodes Incorporated
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：3.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：3.5Ohm @ 1.5A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：12.6 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：354 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：104W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：TO-220AB (Type TH)
- Package / Case：TO-220-3
Single FETs, MOSFETs datasheet and documents for DMG3N60SCT
Single FETs, MOSFETs Overview
The DMG3N60SCT is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a breakdown voltage of 600V and a continuous drain current of 3A at 25°C. The device utilizes PowerMESH technology to achieve low on-resistance, specified as a maximum of 1.8 ohms at a gate-source voltage of 10V. It operates within a junction temperature range of -55°C to 175°C and is housed in a surface-mount TO-252AA (DPAK) package.
Single FETs, MOSFETs Feature Summary
- Utilizes advanced PowerMESH technology for optimized trade-off between switching performance and low on-state resistance
- Designed for high-frequency operation capabilities up to 50 kHz
- Features a soft ultra-fast recovery antiparallel diode integrated with the device
Single FETs, MOSFETs Applications
- High-voltage power switching applications
- DC-DC converter circuits
- Motor control systems requiring high voltage isolation
Single FETs, MOSFETs Procurement Notes
Verify the specific datasheet revision and manufacturer documentation when sourcing this component. Confirm that the part number matches the exact specifications required for your circuit design, particularly regarding the 600V rating and TO-252AA package dimensions. Ensure compliance with relevant industry standards for automotive or industrial use if applicable.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring robust high-voltage handling with moderate current capacity. The integrated fast recovery diode simplifies circuit topology for synchronous rectification or freewheeling applications. Consider thermal management requirements due to the 1.8 ohm on-resistance at higher currents.
Single FETs, MOSFETs Part Context
This component belongs to Diodes Incorporated's discrete semiconductor portfolio, specifically within their MOSFET lineup. The company provides various power solutions for automotive, industrial, and consumer electronics markets. This specific part represents their implementation of silicon-based power switching technology using proprietary cell structures.
Single FETs, MOSFETs Replacement Considerations
Consult official substitution guides from Diodes Incorporated for verified equivalents. Cross-reference parameters such as Vds, Id, Rds(on), and package type when evaluating alternative components from other manufacturers.
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