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DMG4406LSS-13 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N CH 30V 10.3A 8-SO. Review the specifications below when checking this part for your BOM.
The DMG4406LSS-13 is a dual N-channel enhancement mode MOSFET in an SO-8 package. It features a drain-source voltage of 30V and a maximum on-resistance of 15mΩ at VGS=4.5V. Continuous drain current reaches 9.3A at VGS=4.5V and 10.3A at VGS=10V. The device includes an integrated body diode with a forward current rating of 2.5A.
Verify the component revision level against the latest Diodes Incorporated datasheet DS35539 Rev. 10-3. Confirm that the SO-8 tape and reel packaging matches the required quantity specifications for automated assembly processes. Ensure compliance with RoHS and halogen-free requirements as defined in the manufacturer's quality documentation.
Select this component for applications requiring efficient power switching within a 30V system. Evaluate thermal performance based on the specified junction-to-ambient resistance values. Consider the gate threshold voltage range when designing drive circuits to ensure reliable turn-on characteristics under varying load conditions.
This part belongs to the DMG series of surface-mount MOSFETs from Diodes Incorporated. It utilizes a molded plastic case with matte tin terminals. The marking code G4406LS identifies the product type, while YYWW indicates the date code. The device is designed for high efficiency power management.
The datasheet explicitly recommends using DMN3016LSS as the replacement for new designs.
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