DMG4435SSS-13

Single FETs, MOSFETs Overview

The DMG4435SSS-13 is a single P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes silicon technology and is housed in an SOIC-8 surface-mount package. The device features a drain-source breakdown voltage of 30 V and a continuous drain current rating of 7.5 A. Its maximum on-resistance is specified at 20 mOhms, with a gate-source voltage range of ±25 V. Key switching parameters include a gate charge of 35.4 nC, a rise time of 12.7 ns, and a fall time of 22.8 ns. The component supports a power dissipation of 2.5 W and operates within a temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• Single P-channel enhancement mode configuration for efficient high-side switching applications.
• Low on-resistance characteristic designed to minimize conduction losses in power paths.
• Fast switching performance supported by optimized gate charge and transition times.

Single FETs, MOSFETs Applications

• Power management circuits requiring P-channel load switches
• Battery protection modules utilizing high-side control
• DC-DC converter input stages

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix and manufacturer documentation prior to procurement. Confirm that the component meets all required electrical specifications for the intended application environment. Ensure compliance with relevant safety and environmental standards applicable to the final product assembly.

Single FETs, MOSFETs Selection Notes

Select this component based on its 30 V voltage rating and 7.5 A current capacity. Evaluate the thermal requirements against the 2.5 W power dissipation limit. Consider the SOIC-8 package dimensions for PCB layout compatibility and verify that the gate drive voltage aligns with the ±25 V maximum rating.

Single FETs, MOSFETs Part Context

This part belongs to the DMG4435 series from Diodes Incorporated. It is a discrete power transistor designed for general-purpose switching tasks. The component represents a standard solution for managing power flow in low-voltage electronic systems where compact packaging and reliable performance are necessary.

Single FETs, MOSFETs Replacement Considerations

Public confirmed substitute part numbers are not available in the provided data. Verify pinout compatibility and electrical parameter equivalence before considering any alternative components from other manufacturers.