DMG4466SSS-13

$0.40

Description：MOSFET N-CH 30V 10A 8SOP
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:21cece6c3fcc Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

DMG4466SSS-13 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 30V 10A 8SOP. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMG4466SSS-13

Description：MOSFET N-CH 30V 10A 8SOP
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：10A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：23mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：17 nC @ 10 V
Vgs (Max)：±25V
Input Capacitance (Ciss) (Max) @ Vds：478.9 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1.42W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SO
Package / Case：8-SOIC (0.154", 3.90mm Width)

Single FETs, MOSFETs datasheet and documents for DMG4466SSS-13

DMG4466SSS-13

Single FETs, MOSFETs Overview

The DMG4466SSS-13 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (VDS) of 30 V and a continuous drain current (ID) of 10 A at +25°C, with a maximum pulsed drain current (IDM) of 60 A. The device exhibits a static drain-source on-resistance (RDS(ON)) of 23 mΩ at VGS = 10V and 33 mΩ at VGS = 4.5V. It operates within a temperature range of -55°C to +150°C and dissipates up to 1.42 W of power. Packaged in an SO-8 surface-mount case, it includes an internal body diode.

Single FETs, MOSFETs Feature Summary

Designed for high efficiency power management applications through minimized on-state resistance and superior switching performance.
Qualified to AEC-Q101 standards for high reliability.
Totally lead-free, fully RoHS compliant, and halogen and antimony free.
Features low input capacitance, fast switching speed, and low gate resistance.

Single FETs, MOSFETs Applications

Backlighting
Power Management Functions
DC-DC Converters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix matches the required packaging configuration. Confirm that the component meets all applicable environmental compliance requirements for the intended deployment region. Ensure the procurement channel is authorized to guarantee product authenticity and traceability according to manufacturer specifications.

Single FETs, MOSFETs Selection Notes

Select this component for circuits requiring a 30 V N-channel switch with a 10 A continuous current rating. Consider the thermal resistance characteristics when designing heat dissipation strategies. Evaluate the gate charge parameters against driver capabilities to ensure optimal switching transitions and minimize power losses during operation.

Single FETs, MOSFETs Part Context

This part belongs to the DMG4466 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes silicon technology and is housed in an SO-8 package. The series is engineered to balance low conduction losses with efficient dynamic performance for various power switching tasks.

Single FETs, MOSFETs Replacement Considerations

Consult official manufacturer documentation for verified substitute part numbers. Do not assume functional equivalence based solely on pinout or generic electrical ratings without cross-referencing specific datasheet parameters.