DMG4468LFG

Description：MOSFET N-CH 30V 7.62A 8DFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:1e96e4711e6e Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

DMG4468LFG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 30V 7.62A 8DFN. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMG4468LFG

Description：MOSFET N-CH 30V 7.62A 8DFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：7.62A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：15mOhm @ 11.6A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：18.85 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：867 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：990mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：U-DFN3030-8
Package / Case：8-PowerUDFN

Single FETs, MOSFETs datasheet and documents for DMG4468LFG

DMG4468LFG

Single FETs, MOSFETs Overview

The DMG4468LFG is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a DFN3030-8 case with a drain-source voltage (VDSS) of 30 V and a gate-source voltage (VGSS) rating of ±20 V. The device supports a continuous drain current (ID) of 7.62 A at 25°C and a pulsed drain current (IDM) of 45.9 A. Static drain-source on-resistance (RDS(ON)) is specified as 17 mΩ at VGS = 10V, ID = 11.6A, and 23.5 mΩ at VGS = 4.5V, ID = 10A. Power dissipation (PD) is 0.99 W, with a thermal resistance junction-to-ambient (RθJA) of 126.7 °C/W. Operating and storage temperature ranges span from -55 to +150 °C.

Single FETs, MOSFETs Feature Summary

Low on-resistance for efficient power conduction
Fast switching speed capabilities
Low input/output leakage characteristics
Qualified to AEC-Q101 standards for high reliability

Single FETs, MOSFETs Applications

Automotive electronic systems requiring high reliability
Power management circuits utilizing low on-resistance
Switching applications benefiting from fast switching speeds

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the tape and reel packaging configuration containing 3000 units per reel. Confirm that the component meets RoHS compliance and lead-free design requirements as stated in the manufacturer documentation. Ensure the procurement channel is authorized to guarantee product authenticity and adherence to the specified mechanical and electrical parameters.

Single FETs, MOSFETs Selection Notes

Select this component when a compact DFN3030-8 package is required for space-constrained designs. Consider its 30 V drain-source voltage rating and 7.62 A continuous current capability for appropriate load handling. Evaluate the thermal performance based on the 126.7 °C/W junction-to-ambient resistance and ensure the operating environment stays within the -55 to +150 °C temperature range.

Single FETs, MOSFETs Part Context

This part belongs to the DMG4468 series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. It utilizes a molded plastic case material classified as UL 94V-0 flammability rated. The device is designed with moisture sensitivity level 1 per J-STD-020 standards. It represents a 'Green' device compliant with environmental directives.