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DMG4468LK3-13 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 30V 9.7A TO252-3. Review the specifications below when checking this part for your BOM.
The DMG4468LK3-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a TO-252 (DPAK) surface-mount package with a drain-source voltage rating of 30V and a continuous drain current of 9.7A at +25°C. The device exhibits a typical on-resistance of 11mΩ at VGS=10V and ID=11.6A, alongside a total gate charge of 18.85nC. It operates within a junction temperature range of -55°C to +150°C and includes an integrated body diode.
Verify the component authenticity against the manufacturer's official datasheet DS31958 Rev. 3-2. Confirm that the ordering suffix '-13' corresponds to the specified tape and reel packaging format containing 2500 units per reel. Ensure compliance with RoHS and REACH requirements as documented in the product specifications.
Select this component for designs requiring a 30V N-channel MOSFET in a TO-252 package. Evaluate thermal performance based on the 1.68W power dissipation limit at +25°C ambient temperature. Consider the 11mΩ on-resistance for low-loss switching applications and verify gate drive compatibility with the 18.85nC total gate charge requirement.
This part belongs to the DMG4468 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes silicon technology and is housed in a molded plastic TO-252 case with a UL flammability classification of 94V-0. The device is designed for general-purpose switching applications requiring high reliability and low input capacitance.
No specific substitute part numbers are confirmed in the provided documentation.
The maximum pulsed drain current (IDM) is rated at 48A.
Yes, the device is qualified to AEC-Q101 standards for high reliability.
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