DMG4496SSSQ-13

$0.14

Description：MOSFET BVDSS: 25V~30V SO-8 T&R 2
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:4e01171457f2 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

DMG4496SSSQ-13 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET BVDSS: 25V~30V SO-8 T&R 2. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMG4496SSSQ-13

Description：MOSFET BVDSS: 25V~30V SO-8 T&R 2
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：10A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：21.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：10.2 nC @ 10 V
Vgs (Max)：±25V
Input Capacitance (Ciss) (Max) @ Vds：493.5 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1.42W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：8-SOP
Package / Case：8-SOIC (0.154", 3.90mm Width)

Single FETs, MOSFETs datasheet and documents for DMG4496SSSQ-13

DMG4496SSSQ-13

Single FETs, MOSFETs Overview

The DMG4496SSSQ-13 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (V(BR)DSS) of 30V and a continuous drain current (ID) of 10A at +25°C. The maximum on-state resistance (RDS(ON)) is 21.5mΩ at VGS=10V and 29mΩ at VGS=4.5V. Total gate charge (Qg) is 10.2nC at VGS=10V. The device operates within a temperature range of -55°C to +150°C and is housed in an SO-8 package.

Single FETs, MOSFETs Feature Summary

Qualified to AEC-Q101 standards for high reliability
Designed to minimize on-state resistance while maintaining superior switching performance
Totally lead-free, fully RoHS compliant, and halogen/antimony free

Single FETs, MOSFETs Applications

Backlighting
Power Management Functions
DC-DC Converters

Single FETs, MOSFETs Procurement Notes

Verify the automotive suffix 'Q' indicates AEC-Q101 qualification and PPAP capability as specified in the datasheet ordering information. Confirm that electrical and thermal characteristics match standard versions unless explicitly noted otherwise. Ensure compliance with RoHS and REACH directives during procurement. Validate packaging details against official manufacturer specifications before finalizing orders.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring low on-resistance and fast switching speeds in power management circuits. Consider the 30V rating and 10A continuous current capacity for suitable load requirements. Evaluate thermal resistance and power dissipation limits based on specific board designs and ambient temperatures. Verify compatibility with required gate drive voltages for optimal RDS(ON) performance.

Single FETs, MOSFETs Part Context

This part belongs to the DMG4496 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes an SO-8 surface mount package designed for efficient heat dissipation. The product line emphasizes high efficiency in power management applications through optimized silicon architecture and packaging technology.