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Product Detailed Parameters
- Description：MOSFET N/P-CH 35V 5.3A TO252-4L
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel, Common Drain
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：35V
- Current - Continuous Drain (Id) @ 25°C：5.3A, 5A
- Rds On (Max) @ Id, Vgs：35mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：18.7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：850pF @ 25V
- Power - Max：1.54W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-252-5, DPAK (4 Leads + Tab), TO-252AD
- Supplier Device Package：TO-252-4L
- Grade：-
- Qualification：-
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Overview
The DMG4511SK4-13 is a complementary pair enhancement mode MOSFET from Diodes Incorporated, integrating an N-channel and P-channel device in a single TO252-4L package. The N-channel transistor (Q1) supports a drain-source voltage of 35V with a maximum continuous drain current of 13A at +25°C and a typical on-resistance of 35mΩ at VGS=10V. The P-channel transistor (Q2) provides -35V breakdown and -12A continuous current capability, featuring a typical on-resistance of 45mΩ at VGS=-10V. Designed for high efficiency power management, the component operates within a temperature range of -55°C to +150°C.
Feature Summary
- Complementary N-channel and P-channel MOSFETs integrated into a single low-profile package
- Optimized for minimized on-state resistance while maintaining superior switching performance
- Qualified to AEC-Q101 standards for automotive reliability applications
- Totally lead-free and fully RoHS compliant construction
Applications
- Backlighting circuits
- DC-DC converters
- Power management functions
Procurement Notes
Verify the ordering suffix '-13' against the manufacturer's official documentation to confirm tape and reel packaging specifications. Ensure that the selected component meets all applicable environmental compliance requirements, including RoHS and halogen-free standards, as defined by the supplier's quality definitions. Cross-reference the specific date code markings with production records if traceability is required for the intended application.
Selection Notes
Select this component when space-constrained designs require both N-channel and P-channel switching capabilities in a single footprint. The TO252-4L package offers a compact PCB footprint suitable for low-profile applications. Evaluate thermal resistance parameters relative to the expected duty cycle and ambient temperature conditions to ensure junction temperatures remain within the specified operating range during continuous operation.
Part Context
This part belongs to the DMG4511 series of complementary MOSFETs manufactured by Diodes Incorporated. It represents a generation of devices designed to balance low on-resistance with fast switching speeds. The product line targets modern power management systems where board space reduction and energy efficiency are critical design constraints.
Replacement Considerations
Consult the manufacturer's official documentation for confirmed substitute part numbers. Verify pinout compatibility and electrical parameter margins before substituting any alternative components.
