DMG4710SSS-13

Description：MOSFET N-CH 30V 8.8A 8SOP
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:cb047e3d58db Category: Single FETs, MOSFETs Brand: Diodes Incorporated

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

DMG4710SSS-13 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 30V 8.8A 8SOP. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMG4710SSS-13

Description：MOSFET N-CH 30V 8.8A 8SOP
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：8.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：12.5mOhm @ 11.7A, 10V
Vgs(th) (Max) @ Id：2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：43 nC @ 10 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：1849 pF @ 15 V
FET Feature：Schottky Diode (Body)
Power Dissipation (Max)：1.54W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SO
Package / Case：8-SOIC (0.154", 3.90mm Width)

Single FETs, MOSFETs datasheet and documents for DMG4710SSS-13

DMG4710SSS-13

Single FETs, MOSFETs Overview

The DMG4710SSS-13 is an N-channel enhancement mode MOSFET with a monolithically integrated Schottky diode, manufactured by Diodes Incorporated. It features a 30V drain-source voltage rating and a maximum continuous drain current of 11.7A at 25°C. The device exhibits a low on-resistance of 12.5mΩ at VGS=10V and 14.8mΩ at VGS=4.5V. Packaged in an SO-8 surface-mount case, it operates within a temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

DIOFET technology integrates a MOSFET and Schottky diode on a single die to minimize conduction losses and body diode switching losses.
Low gate capacitance ratio reduces the risk of shoot-through or cross-conduction currents during high-frequency operation.
Rated for avalanche ruggedness with specified IAR and EAR limits for enhanced reliability under transient conditions.

Single FETs, MOSFETs Applications

DC-DC converters
Power management functions

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm RoHS compliance and AEC-Q101 qualification status against the latest datasheet revision. Ensure storage conditions adhere to moisture sensitivity level 1 requirements prior to soldering. Validate package markings and lot codes match ordering information.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring low RDS(on) combined with reduced body diode reverse recovery charge. Evaluate thermal resistance values based on specific PCB copper coverage and pad layout designs. Consider the integrated Schottky diode forward voltage characteristics when designing synchronous rectification circuits.

Single FETs, MOSFETs Part Context

This part belongs to the DMG series of DIOFETs from Diodes Incorporated. It utilizes a patented process to combine power switching and freewheeling capabilities in one package. The SO-8 form factor supports surface mount assembly techniques common in modern electronics manufacturing.

Single FETs, MOSFETs Replacement Considerations

Consult official substitution lists for verified alternatives. Cross-reference pinouts and electrical parameters before implementation.

Single FETs, MOSFETs FAQ

What is the function of the integrated Schottky diode?

It provides a low forward voltage path to reduce losses associated with body diode conduction and minimizes reverse recovery charge to lower switching losses.